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參數資料
| 型號： | MCM63P736 |
| 廠商： | Motorola, Inc. |
| 英文描述： | Replaced by PTH12000W : |
| 中文描述： | 128K的× 36和256 × 18位流水線BurstRAM同步快速靜態存儲器 |
| 文件頁數： | 8/27頁 |
| 文件大?。?/td> | 328K |
| 代理商： | MCM63P736 |
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MCM63P636
8
MOTOROLA FAST SRAM
ABSOLUTE MAXIMUM RATINGS
(See Note 1)
Rating
Symbol
Value
Unit
Notes
Power Supply Voltage
VDD
VDDQ
VDDI
Vin
VSS – 0.5 to + 4.0
VSS – 0.5 to 2.5
VSS – 0.5 to 2.5
VSS – 0.5 to
VDDI + 0.5
V
I/O Supply Voltage
V
2, 3
Input Supply Voltage
V
2, 3
Voltage Relative to VSS for Any Pin
Except VDD
V
2, 4
Input Voltage (Three–State I/O)
VIT
VSS – 0.5 to
VDDQ + 0.5
V
2, 4
Output Current (per I/O)
Iout
PD
Tbias
Tstg
±
20
mA
Package Power Dissipation
2.75
W
5
Temperature Under Bias
– 10 to 85
°
C
Storage Temperature
– 55 to 125
°
C
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. This is a steady–state DC parameter that is in effect after the power supply has
achieved its nominal operating level. Power sequencing is not necessary.
3. VDDI = VDDQ.
4. Max Vin and VIT are not to exceed Max VDD.
5. Power dissipation capability is dependent upon package characteristics and use
environment. See Package Thermal Characteristics.
PACKAGE THERMAL CHARACTERISTICS — PBGA
Rating
Symbol
Max
Unit
Notes
Junction to Ambient (@ 200 lfm)
R
θ
JA
R
θ
JB
R
θ
JC
25
°
C/W
1, 2
Junction to Board (Bottom)
12
°
C/W
3
Junction to Case (Top)
10
°
C/W
4
PACKAGE THERMAL CHARACTERISTICS — TQFP
Rating
Symbol
Max
Unit
Notes
Junction to Ambient (@ 200 lfm)
R
θ
JA
R
θ
JB
R
θ
JC
25
°
C/W
1, 2
Junction to Board (Bottom)
17
°
C/W
3
Junction to Case (Top)
9
°
C/W
4
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1).
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
相關PDF資料 |
PDF描述 |
|---|---|
| MCM63P736TQ100R | Replaced by PTH12000W : |
| MCM63P736TQ133R | 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736TQ66 | 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736ZP133R | 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736ZP66R | 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MCM63P736TQ100 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736TQ100R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736TQ133 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736TQ133R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736TQ66 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
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