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參數資料
| 型號： | MCM63R918 |
| 廠商： | Motorola, Inc. |
| 英文描述： | 8MBit Synchronous Late Write Fast Static RAM(8M位同步遲寫快速靜態RAM) |
| 中文描述： | 8MBit快速同步后寫入靜態存儲器（800萬位同步遲寫快速靜態內存） |
| 文件頁數： | 8/21頁 |
| 文件大小： | 253K |
| 代理商： | MCM63R918 |
MCM63R836
MCM63R918
8
MOTOROLA FAST SRAM
AC OPERATING CONDITIONS AND CHARACTERISTICS
(2.375 V
≤
VDD
≤
3.6 V, 0
°
C
≤
TA
≤
70
°
C, Unless Otherwise Noted)
Input Pulse Levels
Input Rise/Fall Time
Input Timing Measurement Reference Level
Output Timing Reference Level
0.25 to 1.25 V
1 V/ns (20% to 80%)
. . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . .
0.75 V
0.75 V
. . . . . . . . . . . . . . . . . . . . . . . . .
Clock Input Timing Reference Level
ZQ for 50
Impedance
R
θ
JA Device
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential Cross–Point
. . . . . .
250
22 C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
READ/WRITE CYCLE TIMING
(See Note 1)
Parameter
Symbol
b l
63R836–3.0
63R918–3.0
63R836–3.3
63R918–3.3
63R836–3.7
63R918–3.7
63R836–4.0
63R918–4.0
63R836–4.4
63R918–4.4
U i
Unit
Notes
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Cycle Time
tKHKH
tKHKL
tKLKH
tKHQX1
3
—
3.3
—
3.7
—
4
—
4.4
—
ns
Clock High Pulse Width
1.2
—
1.2
—
1.5
—
1.5
—
1.5
—
ns
Clock Low Pulse Width
1.2
—
1.2
—
1.5
—
1.5
—
1.5
—
ns
Clock High to Output
Low–Z
0.5
—
0.5
—
0.5
—
0.5
—
1
—
ns
1, 2
Clock High to Output
Valid
tKHQV
—
1.5
—
1.65
—
1.85
—
2
—
2.2
ns
Clock High to Output
Hold
tKHQX
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
1
Clock High to Output
High–Z
tKHQZ
—
1.5
—
1.6
—
1.7
—
2
—
2.2
ns
1, 3
ZZ High to Sleep Mode
tZZE
tZZR
tAVKH
tDVKH
tSVKH
tWVKH
tKHAX
tKHDX
tKHSX
tKHWX
3
—
3.3
—
3.7
—
4
—
4.4
—
ns
ZZ Low to Recovery
—
10
—
10
—
10
—
10
—
10
ns
Setup Times:
Address
Data In
Chip Select
Write Enable
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
Hold Times:
Address
Data In
Chip Select
Write Enable
0.5
—
0.5
—
0.5
—
0.5
—
0.75
—
ns
NOTES:
1. This parameter is sampled and not 100% tested.
2. Measured at
±
200 mV from steady state.
3. Measured at
±
200 mV from steady state. See Test Load Figure 1b.
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