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參數資料
| 型號： | MCM64AF32SG15 |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 256K Asynchronous Secondary Cache Module for Pentium |
| 中文描述： | 32K X 64 CACHE TAG SRAM MODULE, 22 ns, DMA160 |
| 文件頁數： | 10/12頁 |
| 文件大小： | 190K |
| 代理商： | MCM64AF32SG15 |
MCM64AF32
10
MOTOROLA FAST SRAM
TAG RAM WRITE CYCLE
(See Notes 1 and 2)
– 15
Parameter
Symbol
Min
Max
Unit
Notes
Write Cycle Time
tAVAV
tAVWL
tAVWH
tDVWH
tWHDX
tWLQZ
tWHQX
tWHAX
15
—
ns
3
Address Setup Time
0
—
ns
Address Valid to End of Write
12
—
ns
Data Valid to End of Write
7
—
ns
Data Hold Time
0
—
ns
Write Low to Output High–Z
0
7
ns
5, 6, 7
Write High to Output Active
4
—
ns
5, 6, 7
Write Recovery Time
0
—
ns
NOTES:
1. A write occurs when CWE is low.
2. If COE goes low coincident with or after CWE goes low, the output will remain in a high impedance state.
3. All timings are referenced from the last valid address to the first address transition.
4. If COE
≥
VIH, the output will remain in a high impedance state.
5. At any given voltage and temperature, tWLQZ (max) is less than tWHQX (min), both for a given device and from device to device.
6. Transition is measured
±
500 mV from steady–state voltage with load of Figure 1B.
7. This parameter is sampled and not 100% tested.
TAG RAM WRITE CYCLE
(See Notes 1 and 2)
DATA VALID
tDVWH
tAVWL
tAVWH
tAVAV
tWHAX
tWLWH
tWHDX
tWLQZ
tWHQX
HIGH–Z
HIGH–Z
A5 – A17
TWE (WRITE ENABLE)
Q (DATA OUT)
D (DATA IN)
ORDERING INFORMATION
(Order by Full Part Number)
Motorola Memory Prefix
Part Number
Speed (15 = 15 ns)
Package (SG = Gold Pad SIMM)
MCM
64AF32
XX
XX
Full Part Number — MCM64AF32SG15
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