欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: MCM69F536C
廠商: Motorola, Inc.
英文描述: 32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
中文描述: 32K的× 36位流通過BurstRAM同步快速靜態存儲器
文件頁數: 7/12頁
文件大?。?/td> 209K
代理商: MCM69F536C
MCM69F536C
7
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
(Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
VIL
VIH
3.135
3.3
3.6
V
Input Low Voltage
– 0.5*
0.8
V
Input High Voltage
2.0
5.5**
V
*VIL
– 2 V for t
tKHKH/2.
**VIH
6 V for tKHKH/2.
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Symbol
Min
Max
Unit
Notes
Input Leakage Current (0 V
Vin
VDD) (Excluding LBO)
Output Leakage Current (0 V
Vin
VDD)
AC Supply Current (Device Selected,
All Outputs Open,
All Inputs Toggling at Vin
VIL or
VIH,
Cycle Time
tKHKH min)
CMOS Standby Supply Current (Deselected,
Clock (K
)
Cycle Time
tKHKH,
All Inputs Toggling at CMOS Levels
Vin
VSS + 0.2 V or
VDD – 0.2 V)
Clock Running Supply Current (Deselected,
Clock (K
)
Cycle Time
tKHKH,
All Other Inputs Held to Static CMOS Levels
Vin
VSS + 0.2 V or
VDD – 0.2 V)
Output Low Voltage (IOL = 8 mA)
Output High Voltage (IOH = – 4 mA)
NOTES:
1. Reference AC Operating Conditions and Characteristics for input and timing.
2. All addresses transition simultaneously low (LSB) and then high (HSB).
3. Data states are all zero.
4. Device in deselected mode as defined by the Truth Table.
Ilkg(I)
Ilkg(O)
IDDA
±
1
μ
A
±
1
μ
A
MCM69F536C–8.5
MCM69F536C–9
MCM69F536C–10
MCM69F536C–12
320
320
310
300
mA
1, 2, 3
MCM69F536C–8.5
MCM69F536C–9
MCM69F536C–10
MCM69F536C–12
ISB1
150
150
140
130
mA
4
MCM69F536C–8.5
MCM69F536C–9
MCM69F536C–10
MCM69F536C–12
ISB2
55
55
50
45
mA
4
VOL
VOH
0.4
V
2.4
V
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Min
Typ
Max
Unit
Input Capacitance
Cin
CI/O
4
6
pF
Input/Output Capacitance
7
9
pF
相關PDF資料
PDF描述
MCM69F536CTQ8.5R 32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F618CTQ9R 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F618CTQ8.5 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F618CTQ8.5R 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F618C 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
相關代理商/技術參數
參數描述
MCM69F536CTQ10 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F536CTQ10R 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F536CTQ12 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F536CTQ12R 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F536CTQ8.5 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
主站蜘蛛池模板: 岐山县| 儋州市| 类乌齐县| 西吉县| 南阳市| 宜川县| 谢通门县| 西贡区| 易门县| 长治县| 九龙城区| 织金县| 信阳市| 靖宇县| 玛多县| 遵义市| 泰来县| 改则县| 蒙阴县| 柏乡县| 汝州市| 尼木县| 金湖县| 贵港市| 庆阳市| 蚌埠市| 盈江县| 北安市| 泗水县| 喀什市| 肇东市| 霍林郭勒市| 汪清县| 晋城| 昌黎县| 怀安县| 金塔县| 武胜县| 大田县| 根河市| 梧州市|