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參數(shù)資料
| 型號： | MCM69F618CTQ9 |
| 廠商： | MOTOROLA INC |
| 元件分類： | SRAM |
| 英文描述： | 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| 中文描述： | 64K X 18 CACHE SRAM, 9 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 203K |
| 代理商： | MCM69F618CTQ9 |
MCM69F618C
10
MOTOROLA FAST SRAM
APPLICATION INFORMATION
The MCM69F618C BurstRAM is a high speed synchro-
nous SRAM that is intended for use primarily in secondary or
level two (L2) cache memory applications. L2 caches are
found in a variety of classes of computers — from the desk-
top personal computer to the high–end servers and trans-
action processing machines. For simplicity, the majority of L2
caches today are direct mapped and are single bank imple-
mentations. These caches tend to be designed for bus
speeds in the range of 33 to 66 MHz. At these bus rates,
flow–through (non–pipelined) BurstRAMs can be used since
their access times meet the speed requirements for a mini-
mum–latency, zero–wait state L2 cache interface. Latency is
a measure (time) of “dead” time the memory system exhibits
as a result of a memory request.
For those applications that demand bus operation at great-
er than 66 MHz or multi–bank L2 caches at 66 MHz, the pipe-
lined (register/register) version of the 64K x 18 BurstRAM
(MCM69P618) allows the designer to maintain zero–wait
state operation. Multiple banks of BurstRAMs create addi-
tional bus loading and can cause the system to otherwise
miss its timing requirements. The access time (clock–to–
valid–data) of a pipelined BurstRAM is inherently faster than
a non–pipelined device by a few nanoseconds. This does not
come without cost. The cost is latency — “dead” time.
For L2 cache designs that must minimize both latency and
wait states, flow–through BurstRAMs are the best choice in
achieving the highest performance in L2 cache design.
NON–BURST SYNCHRONOUS OPERATION
Although this BurstRAM has been designed for 68K–,
PowerPC–, 486–, i960–, and Pentium–based systems,
these SRAMs can be used in other high speed L2 cache or
memory applications that do not require the burst address
feature. Most L2 caches designed with a synchronous inter-
face can make use of the MCM69F618C. The burst counter
feature of the BurstRAM can be disabled, and the SRAM can
be configured to act upon a continuous stream of addresses.
See Figure 2.
CONTROL PIN TIE VALUES EXAMPLE
(H
≥
VIH, L
≤
VIL)
Non–Burst
ADSP
ADSC
ADV
SE1
SE2
LBO
Sync Non–Burst,
Flow–Through
SRAM
H
L
H
L
H
X
NOTE: Although X is specified in the table as a don’t care, the pin
must be tied either high or low.
WRITES
READS
DQ
K
Q(B)
Q(A)
ADDR
A
B
C
D
E
F
G
H
W
Q(D)
Q(C)
D(E)
D(F)
D(G)
D(H)
G
Figure 2. Example Configuration as Non–Burst Synchronous SRAM
SE3
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| MCM69F618CTQ9R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM69F735 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM69F735ZP6 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM69F735ZP6.5 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM69F735ZP6.5R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
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