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參數資料
| 型號： | MCR12D |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | GT 10C 10#16 SKT RECP |
| 中文描述： | 12 A, 400 V, SCR, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數： | 2/8頁 |
| 文件大小： | 92K |
| 代理商： | MCR12D |
MCR12D, MCR12M, MCR12N
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
2.2
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated VDRM and VRRM; Gate Open)
TJ = 25
°
C
TJ = 125
°
C
IDRM,
IRRM
—
—
—
—
0.01
2.0
mA
ON CHARACTERISTICS
Peak Forward On–State Voltage* (ITM = 24 A)
Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100
)
Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current (VD = 12 V, IG = 20 mA)
Gate Trigger Voltage (Continuous dc) (VD = 12 V; RL =100
)
DYNAMIC CHARACTERISTICS
VTM
IGT
IH
IL
VGT
—
—
2.2
Volts
2.0
8.0
20
mA
4.0
20
40
mA
6.0
25
60
mA
0.5
0.65
1.0
Volts
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125
°
C)
dv/dt
100
250
—
V/
μ
s
Repetitive Critical Rate of Rise of On–State Current
IPK = 50 A, Pw = 40
μ
sec, diG/dt = 1 A/
μ
sec, Igt = 50 mA
di/dt
—
—
50
A/
μ
s
*Indicates Pulse Test: Pulse Width
2.0 ms, Duty Cycle
2%.
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