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參數資料
| 型號： | MCR703A |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管) |
| 中文描述： | 敏感柵硅（可控硅整流管控整流器） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 66K |
| 代理商： | MCR703A |
Semiconductor Components Industries, LLC, 2006
November, 2007 Rev. 7
1
Publication Order Number:
MCR703A/D
MCR703A Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, low cost consumer
applications such as temperature, light and speed control; process and
remote control; and warning systems where reliability of operation is
critical.
Features
Small Size
Passivated Die Surface for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Recommend Electrical Replacement for C106
Surface Mount Package Case 369C
To Obtain “DPAK” in Straight Lead Version (Shipped in Sleeves):
Add ’1’ Suffix to Device Number, i.e., MCR706A1
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B
Machine Model, C
PbFree Packages are Available
8000 V
400 V
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
V
DRM,
V
RRM
Max
Unit
V
Peak Repetitive OffState Voltage (Note 1)
(T
C
= 40 to +110
°
C, Sine Wave, 50 to 60 Hz,
Gate Open)
MCR703A
MCR706A
MCR708A
100
400
600
Peak Non-Repetitive OffState Voltage
(Sine Wave, 50 to 60 Hz, Gate Open,
T
C
= 40 to +110
°
C)
MCR703A
MCR706A
MCR708A
V
RSM
150
450
650
V
OnState RMS Current
(180
°
Conduction Angles; T
C
= 90
°
C)
Average OnState Current (180
°
Conduction
Angles)
T
C
= 40 to +90
°
C
T
C
= +100
°
C
Non-Repetitive Surge Current
(1/2 Sine Wave, 60 Hz, T
J
= 110
°
C)
(1/2 Sine Wave, 1.5 ms, T
J
= 110
°
C)
Circuit Fusing (t = 8.3 msec)
I
T(RMS)
4.0
A
I
T(AV)
2.6
1.6
A
I
TSM
25
35
A
I
2
t
2.6
A
2
sec
Forward Peak Gate Power
(Pulse Width
≤
1.0 sec, T
C
= 90
°
C)
Forward Average Gate Power
(t = 8.3 msec, T
C
= 90
°
C)
Forward Peak Gate Current
(Pulse Width
≤
1.0
sec, T
C
= 90
°
C)
Operating Junction Temperature Range
P
GM
0.5
W
P
G(AV)
0.1
W
I
GM
0.2
A
T
J
T
stg
40 to +110
°
C
°
C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
and V
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
40 to +150
SCRs
4.0 AMPERES RMS
100 600 VOLTS
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Cathode
Gate
4
Anode
Preferred
devices are recommended choices for future use
and best overall value.
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAMS
1 2
3
4
YWW
CR
70xAG
DPAK3
CASE 369D
STYLE 2
1
23
4
YWW
CR
70xAG
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
Y
WW
70xA = Device Code
x = 3, 6 or 8
G
= PbFree Package
= Year
= Work Week
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MCR703AT4 | 功能描述:SCR 100V 4A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR703AT4G | 功能描述:SCR 100V 4A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR703AT4G | 制造商:ON Semiconductor 功能描述:SCR THYRISTOR |
| MCR704 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Silicon Controlled Rectifiers |
| MCR704A | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Silicon Controlled Rectifiers |
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