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參數資料
| 型號： | MCR718T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS) |
| 中文描述： | 4 A, 600 V, SCR |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 68K |
| 代理商： | MCR718T4 |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 4
1
Publication Order Number:
MCR716/D
MCR716, MCR718
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control, process control, temperature, light
and speed control.
Features
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Surface Mount Lead Form Case 369C
Epoxy Meets UL 94, V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
Machine Model, C
8000 V
400 V
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage
(Note 1) (T
J
= 40 to 110
°
C, Sine
Wave, 50 to 60 Hz, Gate Open)
MCR716
MCR718
V
DRM,
V
RRM
400
600
V
OnState RMS Current
(180
°
Conduction Angles; T
C
= 90
°
C)
I
T(RMS)
4.0
A
Average OnState Current
(180
°
Conduction Angles; T
C
= 90
°
C)
I
T(AV)
2.6
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
T
J
= 110
°
C)
I
TSM
25
A
Circuit Fusing Consideration
(t = 8.3 msec)
I
2
t
2.6
A
2
sec
Forward Peak Gate Power
(Pulse Width
≤
1.0 sec, T
C
= 90
°
C)
P
GM
0.5
W
Forward Average Gate Power
(t = 8.3 msec, T
C
= 90
°
C)
P
G(AV)
0.1
W
Forward Peak Gate Current
(Pulse Width
≤
1.0
sec, T
C
= 90
°
C)
I
GM
0.2
A
Operating Junction Temperature Range
T
J
40 to +110
°
C
Storage Temperature Range
T
stg
40 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
SCRs
4.0 AMPERES RMS
400 600 VOLTS
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
Preferred
devices are recommended choices for future use
and best overall value.
DPAK
CASE 369C
STYLE 4
MARKING
DIAGRAM
Y
WW
x
= Year
= Work Week
= 6 or 8
1 2
3
4
YWW
MC
R71x
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MCR718T4G | 功能描述:SCR 600V 4A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR72 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Silicon Controlled Rectifiers |
| MCR72_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| MCR72-002 | 制造商:Motorola Inc 功能描述: |
| MCR72-003 | 功能描述:SCR 100V 8A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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