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參數(shù)資料
型號: MEA250-12DA
廠商: IXYS CORP
元件分類: 參考電壓二極管
英文描述: Fast Recovery Epitaxial Diode (FRED) Module(正向電流260A的快速恢復(fù)外延型二極管模塊)
中文描述: 260 A, 1200 V, SILICON, RECTIFIER DIODE
封裝: MODULE-3
文件頁數(shù): 1/2頁
文件大小: 53K
代理商: MEA250-12DA
2000 IXYS All rights reserved
1 - 2
1
2
3
1
2
3
1
2
3
V
RSM
V
V
RRM
V
Type
MEA 250-12DA
1200
1200
Symbol
Test Conditions
75
75
Maximum Ratings
367
260
1480
I
FRMS
I
FAVM
x
I
FRM
I
FSM
T
C
=
T
C
=
t
P
< 10 s; rep. rating, pulse width limited by T
VJM
T
VJ
= 45 C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
C
C; rectangular, d = 0.5
A
A
A
A
A
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A
A
I
2
t
T
VJ
= 45 C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A
2
s
A
2
s
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A
2
s
A
2
s
T
VJ
T
stg
T
Smax
P
tot
V
ISOL
C
C
C
T
c
= 25 C
50/60 Hz, RMS t = 1 min
I
ISOL
1 mA
Mounting torque (M6)
Terminal connection torque (M6)
W
V~
V~
t = 1 s
M
d
Nm/lb.in.
Nm/lb.in.
d
S
d
A
a
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
mm
mm
m/s
2
Weight
g
Symbol
Test Conditions
Characteristic Values (per diode)
typ.
max.
I
R
T
VJ
= 25 C
T
VJ
= 25 C
T
VJ
= 125 C
I
F
= 150
V
R
= V
V
R
= 0.8 V
RRM
V
R
= 0.8 V
RRM
T
VJ
=125 C
T
VJ
= 25 C
T
VJ
=125 C
T
VJ
= 25 C
mA
mA
mA
V
F
V
V
V
V
I
F
= 260
V
T0
r
T
R
thJH
R
thJC
t
rr
I
-di/dt = 400
For power-loss calculations only
V
m
DC current
DC current
K/W
K/W
I
F
= 300
V
= 600
T
VJ
= 100 C
T
VJ
= 25 C
T
VJ
= 100 C
ns
A
A
Features
G
International standard package
with DCB ceramic base plate
G
Planar passivated chips
G
Short recovery time
G
Low switching losses
G
Soft recovery behaviour
G
Isolation voltage 3600 V~
G
UL registered E 72873
Applications
G
Antiparallel diode for high frequency
switching devices
G
Free wheeling diode in converters
and motor control circuits
G
Inductive heating and melting
G
Uninterruptible power supplies (UPS)
G
Ultrasonic cleaners and welders
Advantages
G
High reliability circuit operation
G
Low voltage peaks for reduced
protection circuits
G
Low noise switching
G
Low losses
Dimensions in mm (1 mm = 0.0394")
450
500
55
83
1.16
1.46
3000
3600
-40...+150
-40...+125
110
28800
29300
23300
23800
2400
2640
2160
2380
150
12.7
9.6
50
2.25-2.75/20-25
4.50-5.50/40-48
1.38
1.69
1.54
1.80
0.228
0.143
12
3
60
Preliminary data
x
I
rating includes reverse blocking losses at T
VJM
, V
R
= 0.6 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
MEK 250-12DA
MEE 250-012DA
875
Fast Recovery
Epitaxial Diode
(FRED) Module
MEA 250-12 DA
MEK 250-12 DA
MEE 250-12 DA
V
RRM
= 1200 V
I
FAVM
= 260 A
t
rr
= 450 ns
1
2
3
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