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參數資料
| 型號： | MFR18060BLR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 327K |
| 代理商： | MFR18060BLR3 |
MFR18060BLR3 MFR18060BLSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications. Specified for GSM 1930 - 1990 MHz.
GSM Performance, Full Frequency Band (1930 - 1990 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts CW
Efficiency — 45% (Typ) @ 60 Watts CW
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1930 MHz, 60 Watts CW
Output Power
Excellent Thermal Stability
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40″ Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
180
1.03
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.97
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Document Number: MRF18060B
Rev. 7, 3/2006
Freescale Semiconductor
Technical Data
MFR18060BLR3
MFR18060BLSR3
1930-1990 MHz, 60 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF18060BLR3
CASE 465A-06, STYLE 1
NI-780S
MRF18060BLSR3
Freescale Semiconductor, Inc., 2006. All rights reserved.
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