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參數資料
| 型號： | MGB15N35CLT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Internally Clamped N-Channel IGBT |
| 中文描述： | 15 A, 380 V, N-CHANNEL IGBT |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 99K |
| 代理商： | MGB15N35CLT4 |
Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 0
1
Publication Order Number:
MGP15N35CL/D
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Gate–Emitter ESD Protection
Temperature Compensated Gate–Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG)
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCER
VGE
IC
380
VDC
VDC
VDC
ADC
Collector–Gate Voltage
380
Gate–Emitter Voltage
22
Collector Current–Continuous
@ TC = 25
°
C
15
Total Power Dissipation
@ TC = 25
°
C
Derate above 25
°
C
PD
136
1.0
Watts
W/
°
C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
175
°
C
N–CHANNEL IGBT
15 A, 350 V
VCE(on) = 1.8 V MAX
http://onsemi.com
TO–220
CASE 221A
STYLE 9
MARKING
DIAGRAMS
GCE
D2PAK
CASE 418B
STYLE 3
Device
Package
Shipping
ORDERING INFORMATION
MGP15N35CL
TO–220
50 Units/Rail
MGC15N35CL
Die Options
Not Applicable
MGB15N35CLT4
D2PAK
800 Tape & Reel
C
E
G
RGE
RG
GB15N35CL
ALYYWW
ALYYWW
GP15N35CL
A
WL, L
YY, Y
WW, W = Work Week
= Assembly Location
= Wafer Lot
= Year
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相關代理商/技術參數 |
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|---|---|
| MGB15N40CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK |
| MGB15N40CLT4 | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| MGB19N35CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB19N35CLT4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB20 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:DOT POINT í 2.0mm HIGH EFFICIENCY LED LAMP |
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