- 您現在的位置：買賣IC網 > PDF目錄382325 > MGB15N35CLT4 (ON SEMICONDUCTOR) Internally Clamped N-Channel IGBT PDF資料下載
參數資料
| 型號： | MGB15N35CLT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Internally Clamped N-Channel IGBT |
| 中文描述： | 15 A, 380 V, N-CHANNEL IGBT |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數： | 4/8頁 |
| 文件大小： | 99K |
| 代理商： | MGB15N35CLT4 |
MGP15N35CL, MGB15N35CL, MGC15N35CL
http://onsemi.com
4
2.5
2.0
0.0
–50
–25
0
25
50
75
100
125
150
1.5
1.0
0.5
45
IC
40
35
30
25
20
15
10
5
00
1
2
3
4
5
6
7
8
45
40
35
30
25
20
15
10
5
00
1
2
3
4
5
6
7
8
30
25
20
15
10
5
00
0.5
1
1.5
2
2.5
3
3.5
4
2.0
1.8
1.3
1.0
0.8
0.0
–50
–25
0
25
50
75
100
125
150
4.5
5
0.5
0.3
10000
1000
100
10
1
0
20
40
60
80
100
120
140 160
180
200
VC
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
IC
C
Tj = 25
°
C
VGE = 10.0 V
VGE = 5.0 V
VGE = 4.0 V
VGE = 3.0 V
Tj = 150
°
C
VGE = 10.0 V
VGE = 5.0 V
VGE = 4.0 V
VGE = 3.0 V
VCE = 10 V
Tj = 150
°
C
Tj = 25
°
C
Tj = 40
°
C
VGE = 15 V
IC = 5 A
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
CRSS
CISS
COSS
Mean + 4
σ
Mean
IC = 1 mA
IC
T
IC = 15 A
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
Tj, JUNCTION TEMPERATURE (
°
C)
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
TEMPERATURE (
°
C)
1.5
IC = 10 A
Mean – 4
σ
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation Voltage
versus Junction Temperature
Figure 5. Capacitance Variation
Figure 6. Threshold Voltage versus Temperature
相關PDF資料 |
PDF描述 |
|---|---|
| MGP15N38CL | Internally Clamped N-Channel IGBT |
| MGP15N40CL | Internally Clamped N-Channel IGBT |
| MGC15N40CL | Internally Clamped N-Channel IGBT |
| MGB15N40CLT4 | Internally Clamped N-Channel IGBT |
| MGP15N43CL | Internally Clamped N-Channel IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MGB15N40CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK |
| MGB15N40CLT4 | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| MGB19N35CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB19N35CLT4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB20 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:DOT POINT í 2.0mm HIGH EFFICIENCY LED LAMP |
發布緊急采購，3分鐘左右您將得到回復。