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參數資料
型號: MGB15N38CL
廠商: ON SEMICONDUCTOR
英文描述: Ignition IGBT 15 Amps, 380 Volts(15A,380V鉗位電壓,點火絕緣柵雙極型晶體管(D2PAK封裝))
中文描述: 點火IGBT15安培,380伏特,(15A條,380v整機鉗位電壓,點火絕緣柵雙極型晶體管(采用D2PAK封裝))
文件頁數: 1/4頁
文件大小: 41K
代理商: MGB15N38CL
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 1
1
Publication Order Number:
MGP15N38CL/D
MGP15N38CL,
MGB15N38CL
Preferred Device
Ignition IGBT
15 Amps, 380 Volts
N–Channel TO–220 and D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
Gate–Emitter ESD protection, Gate Collector Over–Voltage
Protection from monolithic circuitry for usage as an Ignition Coil
Driver.
Temperature Compensated Gate – Collector Clamp Limits Stress
Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCER
VGE
IC
PD
CLAMPED
Vdc
Collector–Gate Voltage
CLAMPED
Vdc
Gate–Emitter Voltage
CLAMPED
Vdc
Collector Current – Continuous
15
Adc
Total Power Dissipation
Derate above 25
°
C
136
0.91
Watts
W/
°
C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to 175
°
C
UNCLAMPED COLLECTOR–TO–EMITTER AVALANCHE
CHARACTERISTICS (TJ < 150
°
C)
Single Pulse Collector–to–Emitter
Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Peak
IL = 14.2 A, L = 3.0 mH,
Starting TJ = 25
°
C
VCC = 50 V, VGE = 5.0 V, Peak
IL = 10 A, L = 3.0 mH,
Starting TJ = 150
°
C
EAS
300
150
mJ
THERMAL CHARACTERISTICS
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
R
θ
JC
R
θ
JA
TL
1.1
62.5
°
C/W
Maximum Lead Temperature for
Soldering Purposes, 1/8
from case
for 5 seconds
260
°
C
1
Gate
3
Emitter
4
Collector
1
Anode
3
Anode
4
Cathode
2
Cathode
TO–220AB
CASE 221A
STYLE 9
12
3
4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
G15N38CL
Y
WW
= Device Code
= Year
= Work Week
G15N38CL
YWW
2
Collector
G15N38CL
YWW
1
2
3
D2PAK
CASE 418B
STYLE 3
4
Device
Package
Shipping
ORDERING INFORMATION
MGP15N38CL
TO–220
50 Units/Rail
MGB15N38CLT4
D2PAK
800 Tape & Reel
15 AMPERES
380 VOLTS (Clamped)
VCE(on) = 1.8 m
http://onsemi.com
N–Channel
C
E
G
Preferred
devices are recommended choices for future use
and best overall value.
相關PDF資料
PDF描述
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相關代理商/技術參數
參數描述
MGB15N40CL 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK
MGB15N40CLT4 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
MGB19N35CL 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK
MGB19N35CLT4 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK
MGB20 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:DOT POINT í 2.0mm HIGH EFFICIENCY LED LAMP
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