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參數資料
| 型號： | MGP4N60ED |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數： | 1/6頁 |
| 文件大小： | 146K |
| 代理商： | MGP4N60ED |
1
Motorola, Inc. 1998
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. Co–packaged IGBTs save space, reduce assembly
time and cost. This new E–series introduces an energy efficient,
ESD protected and short circuit rugged device.
Industry Standard TO–220 Package
High Speed: Eoff = 60 J/A typical at 125
°
C
High Voltage Short Circuit Capability – 10 s minimum at 125
°
C, 400 V
Low On–Voltage 2.0 V typical at 3.0 A, 125
°
C
Soft Recovery Free Wheeling Diode
is Included in the Package
Robust High Voltage Termination
ESD Protection Gate–Emitter Zener Diodes
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCGR
VGE
IC25
IC90
ICM
600
Vdc
Collector–Gate Voltage (RGE = 1.0 M
)
Gate–Emitter Voltage — Continuous
600
Vdc
±
20
Vdc
Collector Current — Continuous @ TC = 25
°
C
— Continuous @ TC = 90
°
C
— Repetitive Pulsed Current (1)
6.0
4.0
8.0
Adc
Apk
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
62.5
0.51
Watts
W/
°
C
Operating and Storage Junction Temperature Range
TJ, Tstg
tsc
–55 to 150
°
C
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125
°
C, RG = 20
)
10
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
R
θ
JC
R
θ
JC
R
θ
JA
TL
2.0
3.6
65
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
260
°
C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s
is a trademark of Motorola, Inc.
REV 1
Order this document
by MGP4N60ED/D
SEMICONDUCTOR TECHNICAL DATA
IGBT & DIODE IN TO–220
4.0 A @ 90
°
C
6.0 A @ 25
°
C
600 VOLTS
SHORT CIRCUIT RATED
LOW ON–VOLTAGE
CASE 221A–09
STYLE 9
TO–220AB
C
E
G
G
C
E
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