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參數資料
| 型號： | MGSF2N02E |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 2.8 Amps, 20 Volts, N−Channel SOT−23 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 54K |
| 代理商： | MGSF2N02E |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 2
1
Publication Order Number:
MGSF2N02EL/D
MGSF2N02EL
Preferred Device
Power MOSFET
2.8 Amps, 20 Volts, NChannel SOT23
These miniature surface mount MOSFETs low R
DS(on)
assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry.
Features
PbFree Packages are Available
Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
Miniature SOT23 Surface Mount Package Saves Board Space
I
DSS
Specified at Elevated Temperature
Applications
DCDC Converters
Power Management in Portable and Battery Powered Products, ie:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
Vdc
GatetoSource Voltage Continuous
V
GS
±
8.0
Vdc
Drain Current
Continuous @ T
A
= 25
°
C
Single Pulse (t
p
= 10 s)
I
D
I
DM
2.8
5.0
A
Total Power Dissipation @ T
A
= 25
°
C
P
D
1.25
W
Operating and Storage Temperature
Range
T
J
, T
stg
55 to
150
°
C
Thermal Resistance
JunctiontoAmbient (Note 1)
Thermal Resistance
JunctiontoAmbient (Note 2)
R
JA
100
300
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. 1” Pad, t < 10 sec.
2. Min pad, steady state.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
D
G
S
NChannel
SOT23
CASE 318
STYLE 21
MARKING
DIAGRAM
NT M
NT
M
= Device Code
= Date Code
PIN ASSIGNMENT
3
2
1
Drain
Gate
2
1
3
Source
2.8 A, 20 V
R
DS(on)
= 85 m (max)
Preferred
devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
相關PDF資料 |
PDF描述 |
|---|---|
| MGSF2N02EL | 2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2N02ELT1 | 2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2N02ELT1G | 2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2N02ELT3 | 2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2N02ELT3G | 2.8 Amps, 20 Volts, N−Channel SOT−23 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MGSF2N02EL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:2.8 Amps, 20 Volts, N−Channel SOT−23 |
| MGSF2N02ELT1 | 功能描述:MOSFET 20V 2.8A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MGSF2N02ELT1G | 功能描述:MOSFET NFET SOT23 20V 2.8A 85mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MGSF2N02ELT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| MGSF2N02ELT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:2.8 Amps, 20 Volts, N−Channel SOT−23 |
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