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參數資料
| 型號： | MGC15N35CL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Internally Clamped N-Channel IGBT |
| 中文描述： | 15 A, 380 V, N-CHANNEL IGBT |
| 封裝： | DIE |
| 文件頁數： | 5/8頁 |
| 文件大小： | 99K |
| 代理商： | MGC15N35CL |
MGP15N35CL, MGB15N35CL, MGC15N35CL
http://onsemi.com
5
100
S
S
S
S
IL
IL
20
18
16
14
12
10
8
6
4
2
0
250
500
750
1000
20
18
16
14
12
10
8
6
4
2
0
250
500
750
1000
20
16
12
8
4
0
–50
0
–25
25
50
75
100
125
150
20
16
12
8
4
0
4
2
0
6
8
10
12
14
16
30
25
20
15
5
0
2
1
0
3
4
5
7
8
9
10
6
20
16
12
8
4
0
25
125
0
50
75
175
150
18
14
10
6
2
25
°
C
150
°
C
VCC = 50 V
VGE = 5.0 V
RG = 1000
INDUCTOR (mH)
TEMPERATURE (
°
C)
TC, CASE TEMPERATURE (
°
C)
IC, COLLECTOR CURRENT (AMPS)
RG, GATE RESISTANCE (OHMS)
RG, GATE RESISTANCE (OHMS)
VCC = 50 V
VGE = 5.0 V
RG = 1000
3.0 mH
6.0 mH
td(off)
tf
td(off)
tf
td(off)
tf
VCC = 300 V
VGE = 5.0 V
Tj = 150
°
C
IC = 10 A
L = 300
μ
H
VCC = 300 V
VGE = 5.0 V
RG = 1000
IC = 10 A
L = 300
μ
H
10
VCC = 300 V
VGE = 5.0 V
Tj = 25
°
C
IC = 10 A
L = 300
μ
H
18
14
10
6
2
2
6
10
14
18
VCC = 300 V
VGE = 5.0 V
RG = 1000
Tj = 150
°
C
L = 300
μ
H
td(off)
tf
S
S
S
S
Figure 7. Switching Speed versus Gate Resistance
Figure 8. Switching Speed versus Gate Resistance
Figure 9. Switching Speed versus Case Temperature
Figure 10. Total Switching Losses
versus Collector Current
Figure 11. Latch Current versus Inductor (Typical)
Figure 12. Latch Current versus Temperature (Typical)
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