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參數資料
| 型號： | MGF0919A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | L & S BAND GaAs FET [ SMD non matched ] |
| 中文描述： | 蜇 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 43K |
| 代理商： | MGF0919A |
Mitsubishi Electric June/2004
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0919A
L & S BAND GaAs FET
[ SMD non
–
matched ]
DESCRIPTION
The MGF0919A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
High power gain
Gp=19dB(TYP.) @f=1.9GHz
High power added efficiency
η
add=37%(TYP.) @f=1.9GHz,Pin=12dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V
Ids=300mA
Rg=500
Delivery -01:
Tape & Reel(1K),
-03:
Trai(50pcs)
Absolute maximum ratings
(Ta=25
°
C)
Symbol
Parameter
V
GSO
Gate to sourcebreakdown voltage
Ratings
-15
Unit
V
V
GDO
Gate to drain breakdown voltage
-15
V
I
D
Drain current
800
mA
I
GR
Reverse gate current
-2.4
mA
I
GF
Forward gate current
10
mA
P
T
Total power dissipation
6
W
Tch
Cannel temperature
175
°
C
°
C
Tstg
Electrical characteristics
(Ta=25
°
C)
Symbol
Parameter
I
DSS
Saturated drain current
V
GS(off)
Gate to source cut-off voltage
gm
Transconductance
Storage temperature
-65 to +175
Test conditions
Limits
Typ.
Unit
Min.
Max.
V
DS
=3V,V
GS
=0V
-
600
800
mA
V
DS
=3V,I
D
=2.0mA
-1.0
-
-5.0
V
V
DS
=3V,I
D
=300mA
-
260
-
mS
Po
Output power
V
DS
=10V,I
D
=300mA,f=1.9GHz
28
30
-
dBm
η
add
Power added Efficiency
Pin=12dBm
-
37
-
%
G
LP
Linear Power Gain
V
DS
=10V,I
D
=300mA,f=1.9GHz
17
19
-
dB
NF
Noise figure
-
1.2
-
dB
Rth(ch-c)
Thermal Resistance *1
Vf Method
-
17
25
°
C/W
*1:
Channel to case / Above parameters, ratings, limits are subject to change.
Fig.1
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