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參數資料
| 型號： | MGF4714CP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT |
| 中文描述： | 塑料模具包裝低噪音銦鎵砷遷移率晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 17K |
| 代理商： | MGF4714CP |
MGF4714CP
MITSUBISHI SEMICONDUCTOR GaAs FET
PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT
Nov. ′97
Typ
–
Max
–
50
Min
-3
–
15
-0.1
–
11.0
–
Limits
Parameter
Test conditions
DESCRIPTION
The MGF4714CP low-noise HEMT(High Electron Mobility
Transistor) is designed for use in L to Ku band amplifiers.
The plastic mold package offer high cost performance, and has a
configuration suitable for microstrip circuits.
The MGF4714CP is mounted in Super 12 tape.
FEATURES
Low noise figure
NFmin.=1.00dB(MAX.)
High associated gain
Gs=11.0dB(MIN.)
@f=12GHz
@f=12GHz
APPLICATION
L to Ku band low noise amplifiers.
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
V
DS
=2V,I
D
=10mA
Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
(T
a
=25C)
Symbol
Parameter
V
GDO
V
GSO
Gate to source voltage
I
D
Drain current
ELECTRICAL CHARACTERISTICS
(T
a
=25C)
Symbol
Unit
V
(BR)GDO
I
GSS
I
DSS
V
GS(off)
gm
G
S
Saturated drain current
Gate to source cut-off voltage
Transconductance
Associated gain
Minimum noise figure
OUTLINE DRAWING
Unit:millimeters
-1.5
–
–
1.00
60
V
μA
mA
V
mS
dB
dB
V
GS
=-2V,V
DS
=0V
V
GS
=0V,V
DS
=2V
V
DS
=2V,I
D
=500μA
V
DS
=2V,I
D
=10mA
V
DS
=2V,I
D
=10mA
f=12GHz
–
–
–
GD-22
Ratings
-4
-4
60
125
P
T
T
ch
T
stg
Unit
V
V
mA
Gate to drain voltage
Total power dissipation
Channel temperature
Storage temperature
50
-65 to +125
mW
C
C
Gate to drain breakdown voltage
Gate to source leakage current
55
–
–
NFmin.
Gate
Source
Drain
3
2
1
I
G
=-10μA
1
2
3
2
0.5±0.1
(8)
(1.2)
(0.6)
4.0±0.3
(R0.1) (R0.1)
2.2±0.2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MGF4851A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) |
| MGF4910D | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:TAPE CARRIER SUPER LOW NOISE INGAAS HEMT |
| MGF4910E | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW MOISE InGaAs HEMT |
| MGF4914D | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:TAPE CARRIER SUPER LOW NOISE INGAAS HEMT |
| MGF4914E | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW MOISE InGaAs HEMT |
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