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參數(shù)資料
| 型號： | MGFC36V3436 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET |
| 中文描述： | 3.4 - 3.6GHz的頻段4瓦內(nèi)部匹配砷化鎵場效應(yīng)管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 131K |
| 代理商： | MGFC36V3436 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC36V3436
3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC36V3436 is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 - 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 4W (TYP.) @ f=3.4 - 3.6 GHz
High power gain
GLP = 12 dB (TYP.) @ f=3.4 - 3.6GHz
High power added efficiency
P.A.E. = 32 % (TYP.) @ f=3.4 - 3.6GHz
Low distortion [item -51]
IM3=-45dBc(Typ.) @Po=25dBm S.C.L.
APPLICATION
item 01 : 3.4 - 3.6 GHz band power amplifier
item 51 : 3.4 - 3.6 GHz band digital ratio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 1.2 (A)
RG=100 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
Symbol
Parameter
Ratings
Unit
making semiconductor products better and more reliable,
VGDO
Gate to drain voltage
-15
V
but there is always the possibility that trouble may occur
VGSO
Gate to source voltage
-15
V
with them. Trouble with semiconductors may lead to personal
ID
Drain current
3.75
A
injury, fire or property damage. Remember to give due
IGR
Reverse gate current
-10
mA
consideration to safety when making your circuit designs,
IGF
Forward gate current
21
mA
with appropriate measures such as (1)placement of
PT
Total power dissipation *1
25
W
substitutive, auxiliary circuits, (2)use of non-flammable
Tch
Channel temperature
175
deg.C
material or (3)prevention against any malfunction or mishap.
Tstg
Storage temperature
-65 / +175
deg.C
*1 : Tc=25deg.C
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
Limits
Typ.
-
Unit
Min.
-
Max.
3.75
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
A
gm
Transconductance
VDS = 3V , ID = 1.1A
-
1
-
S
VGS(off)
Gate to source cut-off voltage
VDS = 3V , ID = 10mA
-
-
-4.5
V
P1dB
Output power at 1dB gain
compression
35
36
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=1.2A, f=3.4 - 3.6GHz
11
12
-
dB
ID
Drain current
-
1.1
1.8
A
P.A.E.
Power added efficiency
-
32
-
%
IM3
3rd order IM distortion *1
-42
-45
-
dBc
Rth(ch-c)
Thermal resistance *2
delta Vf method
-
5
6
deg.C/W
*1 : item -51,2 tone test,Po=25dBm Single Carrier Level,f=3.6GHz,delta f=5MHz
*2 : Channel-case
18-Sep-'98
MITSUBISHI
ELECTRIC
12.0
21.0 +/-0.3
10.7
(1)
17.0 +/-0.2
4
.
5
+
/
-
0
.
4
0
.
2
GF-8
1
.
6
2
/
M
-
I
N
.
(2)
1
2
.
9
+
0
2
2
M
I
N
OUTLINE DRAWING
(1) GATE
(3) DRAIN
0
.
1
2
.
6
+
/
-
0
.
2
R-1.6
(3)
(2)
1
1
.
3
0.6 +/-0.15
Unit : millimeters
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| MGFC36V3436_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET |
| MGFC36V3436_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC36V3742A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET |
| MGFC36V3742A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET |
| MGFC36V3742A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
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