型號: | MGFC36V6472A |
廠商: | Mitsubishi Electric Corporation |
英文描述: | 6.4 - 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET |
中文描述: | 6.4 - 7.2GHz帶4瓦內部匹配砷化鎵場效應管 |
文件頁數: | 1/2頁 |
文件大?。?/td> | 109K |
代理商: | MGFC36V6472A |
相關PDF資料 |
PDF描述 |
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MGFC36V7177A | B230A, SCHOTTKY RECTIFIER, SMA |
MGFC36V7785A | 7.7 - 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET |
MGFC42V3742A | 3.7- 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET |
MGFC42V3742 | 3.7 - 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET |
MGFC45V5053A | 5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET |
相關代理商/技術參數 |
參數描述 |
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MGFC36V6472A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET |
MGFC36V6472A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
MGFC36V7177A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET |
MGFC36V7177A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET |
MGFC36V7177A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |