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參數資料
| 型號： | MGFC45V4450A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| 中文描述： | 4.4 - 5.0GHz波段32W內部匹配砷化鎵場效應管 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 140K |
| 代理商： | MGFC45V4450A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V4450A
4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC45V4450A is an internally impedance-matched
GaAs power FET especially designed for use in 4.4 - 5.0
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=4.4 - 5.0 GHz
High power gain
GLP = 10 dB (TYP.) @ f=4.4 - 5.0GHz
High power added efficiency
P.A.E. = 34 % (TYP.) @ f=4.4 - 5.0GHz
Low distortion [item -51]
IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
APPLICATION
item 01 : 4.4 - 5.0 GHz band power amplifier
item 51 : 4.4 - 5.0 GHz band digital ratio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 8 (A)
RG=25 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
Symbol
Parameter
Ratings
Unit
making semiconductor products better and more reliable,
VGDO
Gate to drain voltage
-15
V
but there is always the possibility that trouble may occur
VGSO
Gate to source voltage
-15
V
with them. Trouble with semiconductors may lead to personal
ID
Drain current
20
A
injury, fire or property damage. Remember to give due
IGR
Reverse gate current
-80
mA
consideration to safety when making your circuit designs,
IGF
Forward gate current
168
mA
with appropriate measures such as (1)placement of
PT *1
Total power dissipation
150
W
substitutive, auxiliary circuits, (2)use of non-flammable
Tch
Channel temperature
175
deg.C
material or (3)prevention against any malfunction or mishap.
Tstg
Storage temperature
-65 / +175
deg.C
*1 : Tc=25deg.C
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
Limits
Typ.
24
Unit
Min.
-
Max.
-
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
A
gm
Transconductance
VDS = 3V , ID = 8A
-
8
-
S
VGS(off)
Gate to source cut-off voltage
VDS = 3V , ID = 160mA
-2
-
-5
V
P1dB
Output power at 1dB gain
compression
44
45
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=8A, f=4.4 - 5.0GHz
9
10
-
dB
ID
Drain current
-
8
-
A
P.A.E.
Power added efficiency
-
34
-
%
IM3 *2
3rd order IM distortion
-42
-45
-
dBc
Rth(ch-c) *3
Thermal resistance
delta Vf method
-
0.8
1
deg.C/W
*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=4.4,3.5,5.0GHz,delta f=10MHz
*3 : Channel-case
Feb. 1999
MITSUBISHI
ELECTRIC
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
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| MGFC45V4450A_03 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5053A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5867 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5964A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5964A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET |
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