型號: | MGFK38V2732 |
廠商: | Mitsubishi Electric Corporation |
英文描述: | RECTIFIER BRIDGE 10A 50V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX |
中文描述: | 12.7 - 13.2GHz頻段6W內部匹配砷化鎵場效應管 |
文件頁數: | 1/5頁 |
文件大小: | 410K |
代理商: | MGFK38V2732 |
相關PDF資料 |
PDF描述 |
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MGFL45V1920A | 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
MGFL45V1920 | 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
MGFX39V0717 | 10.7 - 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET |
MGP11N60ED | 11A,600V Insulated Gate Biploar Transistor with Anti-Parallel Diode(N-Channel Enhancement-Mode Silicon Gate)(帶軟恢復超快速整流器的絕緣柵雙極性晶體管(N溝道增強型硅門)) |
MGP11N60ED | SHORT CIRCUIT RATED LOW ON-VOLTAGE |
相關代理商/技術參數 |
參數描述 |
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MGFK39V4045 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5 GHz BAND / 8W |
MGFK39V4045_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5 GHz BAND / 8W |
MGFK41A4045 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5 GHz BAND / 12W |
MGFK44A4045 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET |
MGFK44A4045_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5 GHz BAND / 25W |