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參數(shù)資料
| 型號： | MGP15N35CL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Internally Clamped N-Channel IGBT |
| 中文描述： | 15 A, 380 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 99K |
| 代理商： | MGP15N35CL |
MGP15N35CL, MGB15N35CL, MGC15N35CL
http://onsemi.com
5
100
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S
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S
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0
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°
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°
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VCC = 50 V
VGE = 5.0 V
RG = 1000
INDUCTOR (mH)
TEMPERATURE (
°
C)
TC, CASE TEMPERATURE (
°
C)
IC, COLLECTOR CURRENT (AMPS)
RG, GATE RESISTANCE (OHMS)
RG, GATE RESISTANCE (OHMS)
VCC = 50 V
VGE = 5.0 V
RG = 1000
3.0 mH
6.0 mH
td(off)
tf
td(off)
tf
td(off)
tf
VCC = 300 V
VGE = 5.0 V
Tj = 150
°
C
IC = 10 A
L = 300
μ
H
VCC = 300 V
VGE = 5.0 V
RG = 1000
IC = 10 A
L = 300
μ
H
10
VCC = 300 V
VGE = 5.0 V
Tj = 25
°
C
IC = 10 A
L = 300
μ
H
18
14
10
6
2
2
6
10
14
18
VCC = 300 V
VGE = 5.0 V
RG = 1000
Tj = 150
°
C
L = 300
μ
H
td(off)
tf
S
S
S
S
Figure 7. Switching Speed versus Gate Resistance
Figure 8. Switching Speed versus Gate Resistance
Figure 9. Switching Speed versus Case Temperature
Figure 10. Total Switching Losses
versus Collector Current
Figure 11. Latch Current versus Inductor (Typical)
Figure 12. Latch Current versus Temperature (Typical)
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| MGC15N35CL | Internally Clamped N-Channel IGBT |
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| MGP15N38CL | Internally Clamped N-Channel IGBT |
| MGP15N40CL | Internally Clamped N-Channel IGBT |
| MGC15N40CL | Internally Clamped N-Channel IGBT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MGP15N35CL_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK |
| MGP15N38CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Internally Clamped N-Channel IGBT |
| MGP15N40CL | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| MGP15N40CL_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK |
| MGP15N40CLG | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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