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參數(shù)資料
型號(hào): MIC94030
廠商: Micrel Semiconductor,Inc.
英文描述: TinyFET⑩ P-Channel MOSFET Preliminary Information
中文描述: TinyFET⑩P溝道MOSFET的初步信息
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 33K
代理商: MIC94030
MIC94030/94031
Micrel
6
1997
6-41
MIC94030/94031
TinyFET P-Channel MOSFET
Preliminary Information
General Description
The MIC94030 and MIC94031 are 4-terminal silicon gate
P-channel MOSFETs that provide low on-resistance in a very
small package.
Designed for high-side switch applications where space is
critical, the MIC94030/1 exhibits an on-resistance of typically
0.75
at 4.5V gate-to-source voltage. The MIC94030/1 also
operates with only 2.7V gate-to-source voltage.
The MIC94030 is the basic 4-lead P-channel MOSFET. The
MIC94031 is a variation that includes an internal gate pull-up
resistor that can reduce the system parts count in many
applications.
The 4-terminal SOT-143 package permits a substrate con-
nection separate from the source connection. This 4-terminal
configuration improves the
θ
JA
(improved heat dissipation)
and makes analog switch applications practical.
The small size, low threshold, and low R
DS(on)
make the
MIC94030/1 the ideal choice for PCMCIA card sleep mode or
distributed power management applications.
Features
13.5V minimum drain-to-source breakdown
0.75
typical on-resistance
at 4.5V gate-to-source voltage
0.45
typical on-resistance
at 10V gate-to-source voltage
Operates with 2.7V gate-to-source voltage
Separate substrate connection for added control
Industry’s smallest surface mount package
Applications
Distributed power management
PCMCIA card power management
Battery-powered computers, peripherals
Hand-held bar-code scanners
Portable communications equipment
Ordering Information
Part Number
MIC94030BM4
MIC94031BM4
* Operating Junction Temperature
Temperature Range*
–55
°
C to +150
°
C
–55
°
C to +150
°
C
Package
SOT-143
SOT-143
Gate
Source
Drain
Substrate
Schematic Symbol
MIC94030
MIC94031
Schematic Symbol
Pin Configuration
SOT-143 Package (M4)
Typical PCB Layout
S
D
G
SS
PCB heat sink
plane improves
heat dissipation
PCB traces
G
S
D
SS
~500k
Internal
gate-to-source
pull-up resistor
G
S
D
SS
Functional Diagrams
Substrate
Source
Gate
Drain
P3x
Part
Identification
Part Number
MIC94030BM4
MIC94031BM4
Identification
P30
P31
Patents 5,355,008; 5,589,702
相關(guān)PDF資料
PDF描述
MIC94030BM4 TinyFET⑩ P-Channel MOSFET Preliminary Information
MIC94031BM4 10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
MIC94050 4-Terminal TinyFET⑩ P-Channel MOSFET
MIC94050BM4 4-Terminal TinyFET⑩ P-Channel MOSFET
MIC94051BM4 4-Terminal TinyFET⑩ P-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MIC94030_06 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:TinyFET㈢ P-Channel MOSFET
MIC94030_11 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:TinyFET P-Channel MOSFET
MIC94030BM4 制造商:Rochester Electronics LLC 功能描述:- Bulk
MIC94030BM4 T&R 制造商:Micrel Inc 功能描述:Dual P-Channel MOSFET
MIC94030BM4 TR 功能描述:MOSFET P-CH 16V 1A SOT-143 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:TinyFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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