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參數(shù)資料
| 型號(hào)： | MID150-12A4 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT Modules Short Circuit SOA Capability Square RBSOA |
| 中文描述： | 180 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-7 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 120K |
| 代理商： | MID150-12A4 |
2000 IXYS All rights reserved
2 - 4
MII 150-12 A4
MID 150-12 A4
MDI 150-12 A4
Symbol
Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
(BR)CES
V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 4 mA, V
CE
= V
GE
4.5
6.5
V
I
CES
V
CE
= V
CES
T
J
= 25 C
T
J
= 125 C
7.5 mA
11
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
400
nA
V
CE(sat)
I
C
= 100 A, V
GE
= 15 V
2.2
2.7
V
C
ies
C
oes
C
res
6.6
nF
nF
nF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
1
0.44
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
100
70
500
70
15
11.5
ns
ns
ns
ns
mJ
mJ
R
thJC
R
thJS
0.17 K/W
with heatsink compound
0.33
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 100 A, V
GE
= 0 V,
I
F
= 100 A, V
GE
= 0 V, T
J
= 125 C
2.3
1.8
2.5
1.9
V
V
I
F
T
C
= 25 C
T
C
= 80 C
200
130
A
A
I
RM
t
rr
I
F
= 100 A, V
GE
= 0 V, -di
F
/dt = 800 A/ s
T
J
= 125 C, V
R
= 600 V
80
A
200
ns
R
thJC
R
thJS
0.33 K/W
with heatsink compound
0.66
K/W
Inductive load, T
J
= 125 C
I
C
= 100 A, V
= ±15 V
V
CE
= 600 V, R
G
= 10
Dimensions in mm (1 mm = 0.0394")
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| MID200-12A4 | 功能描述:IGBT 模塊 200 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| MID300-12A4 | 功能描述:IGBT 模塊 300 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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