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參數資料
| 型號： | MJ21195 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 16 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 149K |
| 代理商： | MJ21195 |
1
Motorola Bipolar Power Transistor Device Data
The MJ21195 and MJ21196 utilize Perforated Emitter technology and are
specifically designed for high power audio output, disk head positioners and linear
applications.
Total Harmonic Distortion Characterized
High DC Current Gain – hFE = 25 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 3 A, 80 V, 1 Second
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
VCEX
IC
250
Vdc
Collector–Base Voltage
400
Vdc
Emitter–Base Voltage
5
Vdc
Collector–Emitter Voltage – 1.5 V
400
Vdc
Collector Current — Continuous
Collector Current —
Peak (1)
16
30
Adc
Base Current — Continuous
IB
PD
5
Adc
Total Power Dissipation @ TC = 25
°
C
Derate Above 25
°
C
250
1.43
Watts
W/
°
C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to +200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.7
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C
±
5
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
250
—
—
Vdc
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
(1) Pulse Test: Pulse Width = 5
μ
s, Duty Cycle
≤
10%.
ICEO
—
—
100
μ
Adc
(continued)
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ21195/D
16 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
250 WATTS
*Motorola Preferred Device
CASE 1–07
TO–204AA
(TO–3)
REV 1
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| MJB44H11 | Card Edge Connector; No. of Contacts:44; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJ21195_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Power Transistors |
| MJ21195G | 功能描述:兩極晶體管 - BJT 16A 250V 250W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ21196 | 功能描述:兩極晶體管 - BJT 16A 250V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ21196G | 功能描述:兩極晶體管 - BJT 16A 250V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ21294 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon Power Transistor |
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