- 您現在的位置：買賣IC網 > PDF目錄382325 > MJB44H11 (ON SEMICONDUCTOR) Card Edge Connector; No. of Contacts:44; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes PDF資料下載
參數資料
| 型號： | MJB44H11 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Card Edge Connector; No. of Contacts:44; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes |
| 中文描述： | 10 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 418B-04, D2PAK-3 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 75K |
| 代理商： | MJB44H11 |
Semiconductor Components Industries, LLC, 2003
December, 2003 Rev. 1
1
Publication Order Number:
MJB44H11/D
MJB44H11 (NPN),
MJB45H11 (PNP)
Preferred Devices
Complementary
Power Transistors
D
2
PAK for Surface Mount
. . . for general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94, VO @ 0.125 in
ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
80
Vdc
EmitterBase Voltage
V
EB
5
Vdc
Collector Current Continuous
Peak
I
C
10
20
Adc
Total Power Dissipation
@ T
C
= 25
°
C
Derate above 25
°
C
P
D
50
1.67
Watts
W/
°
C
Total Power Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
2.0
0.016
Watts
W/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to
150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2.5
°
C/W
Thermal Resistance, Junction to Ambient
R
θ
JA
75
°
C/W
Device
Package
Shipping
ORDERING INFORMATION
MJB44H11
D
2
PAK
D
2
PAK
CASE 418B
STYLE 1
50 Units/Rail
Preferred
devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
B4xH11
YWW
SILICON POWER
TRANSISTORS
10 AMPERES
80 VOLTS
50 WATTS
Y
WW
B4xH11
x
= Year
= Work Week
= Specific Device Code
= 4 or 5
MJB44H11T4
D
2
PAK
800/Tape & Reel
MJB45H11
D
2
PAK
50 Units/Rail
MJB45H11T4
D
2
PAK
800/Tape & Reel
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
相關PDF資料 |
PDF描述 |
|---|---|
| MJB44H11T4 | Complementary Power Transistors |
| MJB45H11 | Complementary Power Transistors |
| MJB45H11T4 | Complementary Power Transistors |
| MJF31C | 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS |
| MJF32C | 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJB44H11_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors D2PAK for Surface Mount |
| MJB44H11G | 功能描述:兩極晶體管 - BJT 8A 80V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJB44H11T4 | 功能描述:兩極晶體管 - BJT 8A 80V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJB44H11T4-A | 功能描述:TRANS NPN 80V 10A D2PAK-3 制造商:stmicroelectronics 系列:- 包裝:剪切帶（CT） 零件狀態:有效 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:10A 電壓 - 集射極擊穿（最大值）:80V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1V @ 400mA，8A 電流 - 集電極截止（最大值）:10μA 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:40 @ 4A，1V 功率 - 最大值:50W 頻率 - 躍遷:- 安裝類型:表面貼裝 封裝/外殼:TO-263-3，D2Pak（2 引線+接片），TO-263AB 供應商器件封裝:D2PAK 標準包裝:1 |
| MJB44H11T4G | 功能描述:兩極晶體管 - BJT 8A 80V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。