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參數資料
| 型號： | MJ21195 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 16 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數： | 3/6頁 |
| 文件大小： | 149K |
| 代理商： | MJ21195 |
3
Motorola Bipolar Power Transistor Device Data
IB = 2 A
1.5 A
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
hF
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
hF
hF
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
I
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
I
PNP MJ21195
NPN MJ21196
hF
TYPICAL CHARACTERISTICS
PNP MJ21195
PNP MJ21195
NPN MJ21196
NPN MJ21196
1000
100
10
100
10
1.0
0.1
TJ = 100
°
C
25
°
C
–25
°
C
VCE = 20 V
1000
100
10
100
10
1.0
0.1
TJ = 100
°
C
25
°
C
–25
°
C
VCE = 20 V
1000
100
10
100
10
1.0
0.1
1000
100
10
100
10
1.0
0.1
30
25
20
15
10
5.0
0
5.0
0
10
15
20
25
30
25
20
15
10
0
5.0
0
10
15
20
25
5.0
1.5 A
1 A
0.5 A
IB = 2 A
TJ = 25
°
C
TJ = 100
°
C
25
°
C
–25
°
C
VCE = 5 V
TJ = 100
°
C
25
°
C
–25
°
C
VCE = 5 V
1 A
0.5 A
TJ = 25
°
C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJ21195_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Power Transistors |
| MJ21195G | 功能描述:兩極晶體管 - BJT 16A 250V 250W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ21196 | 功能描述:兩極晶體管 - BJT 16A 250V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ21196G | 功能描述:兩極晶體管 - BJT 16A 250V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ21294 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon Power Transistor |
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