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參數資料
| 型號： | MIMD10A-7 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-6 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 83K |
| 代理商： | MIMD10A-7 |
DS30381 Rev. 5 - 2
1 of 3
MIMD10A
www.diodes.com
Diodes Incorporated
Epitaxial Planar Die Construction
Built-In Biasing Resistors
One 500mA PNP and One 100mA NPN
Available in Lead Free/RoHS Compliant Version (Note 2)
Characteristic
Symbol
V
CC
V
IN
I
O
Value
-50
-5 to +5
-500
Unit
V
V
mA
Supply Voltage
Input Voltage
Output Current
Features
Maximum Ratings PNP Section Tr1
@ T
A
= 25 C unless otherwise specified
A
M
J
L
D
B C
H
K
G
F
E
1
C
2
B
1
C
1
E
2
B
2
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 4, on Page 2
Marking Code: C73 (See Page 2)
Ordering & Date Code: See Page 2
Terminal Connections: See Diagram
Weight: 0.015 grams (approx.)
T
C
U
D
O
R
P
W
E
N
P/N
R1
0.1K
10K
R2
MIMD10A Tr1
Tr2
10K
-
R
1
R
1
R
2
T
r2
T
r1
SCHEMATIC DIAGRAM
MIMD10A
DUAL PRE-BIASED TRANSISTORS
FOR POWER MANAGEMENT
Maximum Ratings NPN Section Tr2
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
50
50
5
100
Unit
V
V
V
mA
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Maximum Ratings - Total
Characteristic
Symbol
P
d
T
j
, T
STG
Value
200
-55 to +150
Unit
mW
°C
Power Dissipation (Note 1)
Operating and Storage Temperature Range
@ T
A
= 25 C unless otherwise specified
SOT-363
Min
Dim
A
B
C
D
F
H
J
K
L
M
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.80
2.20
0.10
0.90
1.00
0.25
0.40
0.10
0.25
0°
8
All Dimensions in mm
2. No purposefully added lead.SPICE MODELS: MIMD10A
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