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參數資料
| 型號： | MJ11017 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON |
| 中文描述： | 15 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 235K |
| 代理商： | MJ11017 |
1
Motorola Bipolar Power Transistor Device Data
"
!
. . . designed for use as general purpose amplifiers, low frequency switching and
motor control applications.
High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types)
Collector–Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) – MJ11018, 17
VCEO(sus)
= 250 Vdc (Min) – MJ11022, 21
Low Collector–Emitter Saturation
VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A
VCE(sat)
= 1.8 V (Typ) @ IC = 10 A
100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.
Rating
Collector–Emitter Voltage
Symbol
VCEO
MJ11017
150
MJ11021
250
Unit
Vdc
Derate Above 25 C
175
Watts
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (
°
C)
50
75
100
125
200
200
50
P
100
0
150
175
25
0
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ11017/D
30 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60–120 VOLTS
200 WATTS
*Motorola Preferred Device
CASE 1–07
TO–204AA
(TO–3)
相關PDF資料 |
PDF描述 |
|---|---|
| MJ11021 | 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS |
| MJ11022 | 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS |
| MJ11017 | POWER TRANSISTORS(15A,150-250V,175W) |
| MJ11021 | POWER TRANSISTORS(15A,150-250V,175W) |
| MJ11022 | POWER TRANSISTORS(15A,150-250V,175W) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJ11018 | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(15A,150-250V,175W) |
| MJ11019 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Darlington Power Transistor |
| MJ11020 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| MJ11021 | 功能描述:達林頓晶體管 30A 250V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJ11021_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Darlington Silicon Power Transistors |
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