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參數(shù)資料
| 型號： | MJ15019 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS |
| 中文描述： | 4 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 135K |
| 代理商： | MJ15019 |
1
Motorola Bipolar Power Transistor Device Data
!$"& %"
"##$ "#
. . . designed for use as high frequency drivers in Audio Amplifiers.
High Gain Complementary Silicon Power Transistors
Safe Operating Area 100% Tested
Excellent Frequency Response — fT = 20 MHz min.
Rating
Symbol
Unit
Derate above 25 C
0.86
W/ C
Operating and Storage Junction
TJ, Tstg
–65 to +200
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
R
θ
JC
Unit
C/W
1.17
0
TC, CASE TEMPERATURE (
°
C)
0
25
75
80
40
100
125
P
175
200
60
20
SECOND BREAKDOWN
DERATING
THERMAL DERATING
50
100
150
Figure 1. Power Derating
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ15018/D
*Motorola Preferred Device
4.0 AMPERES
COMPLEMENTARY
SILICON
POWER TRANSISTORS
200 AND 250 VOLTS
150 WATTS
CASE 1–07
TO–204AA
(TO–3)
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