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參數資料
| 型號： | MJB18004D2T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | D2PAK-3 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 222K |
| 代理商： | MJB18004D2T4 |
High Speed, High Gain Bipolar
NPN Power Transistor with
Integrated Collector-Emitter
Diode and Built-in Efficient
Antisaturation Network
D2PAK For Surface Mount
The MJB18004D2T4 is state–of–art High Speed High gain Bipolar
transistor (H2BIP). High dynamic characteristics and lot to lot
minimum spread (
±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no need to guarantee an
hFE window.
Main features:
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ I
C = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
Integrated Collector–Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic V
CE(sat)
“6 Sigma” Process Providing Tight and Reproductible Parameter
Spreads
It’s characteristics make it also suitable for PFC application.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 0
1
Publication Order Number:
MJB18004D2T4/D
MJB18004D2T4
POWER TRANSISTORS
5 AMPERES
1000 VOLTS
75 WATTS
D2PAK
CASE 418B
STYLE 1
MARKING DIAGRAM
Y
= Year
WW
= Work Week
YWW
MJB
18004D2
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