- 您現在的位置：買賣IC網 > PDF目錄98015 > MJD13003-I (ON SEMICONDUCTOR) 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數資料
| 型號： | MJD13003-I |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CASE 369-07, 3 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 133K |
| 代理商： | MJD13003-I |
High Voltage SWITCHMODET Series
DPAK For Surface Mount Applications
This device is designed for high–voltage, high–speed power
switching inductive circuits where fall time is critical. It is particularly
suited for 115 and 220 V SWITCHMODE applications such as
switching regulators, inverters, motor controls, solenoid/relay drivers
and deflection circuits.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No
Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Reverse Biased SOA with Inductive Loads @ T
C = 100
_C
Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100_C...
tc @ 1.0 A,
100
_C is 290 ns (Typ)
700 V Blocking Capability
Switching and SOA Applications Information
Electrically Similar to the Popular MJE13003
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO(sus)
400
Vdc
Collector–Emitter Voltage
VCEV
700
Vdc
Emitter Base Voltage
VEBO
9
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
1.5
3
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
0.75
1.5
Adc
Emitter Current — Continuous
— Peak (1)
IE
IEM
2.25
4.5
Adc
Total Power Dissipation @ TA = 25_C (2)
Derate above 25
_C
PD
1.56
0.0125
Watts
W/
_C
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
15
0.12
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–65 to +150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
8.33
_C/W
Thermal Resistance, Junction to Ambient (2)
RθJA
80
_C/W
Maximum Lead Temperature for
Soldering Purposes
TL
260
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
(2) When surface mounted on minimum pad sizes recommended.
SWITCHMODE are trademarks of ON Semiconductor, Inc.
Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 1
1
PublicMJD13003/D
MJD13003
NPN SILICON
POWER TRANSISTOR
1.5 AMPERES
400 VOLTS
15 WATTS
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.243 6.172
0.063 1.6
0.1
18
3.0
0.07 1.8
0.165 4.191
0.190 4.826
inches
mm
CASE 369A–13
CASE 369–07
相關PDF資料 |
PDF描述 |
|---|---|
| MJD13003 | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJD13003T4 | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJD18002D2-1 | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJD32-1 | 3 A, 40 V, PNP, Si, POWER TRANSISTOR |
| MJE13005BU | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD148 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon Power Transistor |
| MJD148_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon Power Transistor |
| MJD148T4 | 功能描述:兩極晶體管 - BJT 4A 45V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD148T4G | 功能描述:兩極晶體管 - BJT 4A 45V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD18002D2 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor |
發布緊急采購，3分鐘左右您將得到回復。