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參數資料
| 型號： | MJD117T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Darlington Power Transistors |
| 中文描述： | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 394K |
| 代理商： | MJD117T4 |
2003. 3. 27
1/2
SEMICONDUCTOR
TECHNICAL DATA
MJD117/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 4
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: h
FE
=1000(Min.),
Low Collector-Emitter Saturation Voltage.
Straight Lead (IPAK, "L" Suffix)
Complementary to MJD112/L.
V
CE
=-4V, I
C
=-1A.
MAXIMUM RATING (Ta=25
)
DPAK
DIM
MILLIMETERS
+
+
+
+
+
+
A
B
C
D
F
H
I
J
K
L
M
O
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
+
+
+
+
+
+
+
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
0.91 0.10
0.90 0.1
E
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10
0.95 MAX
P
Q
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Sustaining Voltage
V
CEO(SUS)
I
C
=-30mA, I
B
=0
-100
-
-
V
Collector Cut-off Current
I
CEO
V
CE
=-50V, I
B
=0
-
-
-20
A
I
CBO
V
CB
=-100V, I
E
=0
-
-
-20
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-2
mA
DC Current Gain
h
FE
V
CE
=-3V, I
C
=-0.5A
500
-
-
V
CE
=-3V, I
C
=-2A
1,000
12,000
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-2A, I
B
=-8mA
-
-
-2.0
V
Base-Emitter On Voltage
V
BE(ON)
V
CE
=-3V, I
C
=-2A
-
-
-2.8
V
Current Gain Bandwidth Product
f
T
V
CE
=-10V, I
C
=0.75A, f=1MHz
25
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=0.1MHz
-
-
200
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-100
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-2
A
Pulse
-4
Base Current
DC
I
B
-50
mA
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
20
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
C
B
E
R
10k
0.6k
R
1
2
=
=
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
2.0 0.2
+
+
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
L
P
Q
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
+
+
+
+
+
+
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD117T4G | 功能描述:達林頓晶體管 2A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD117TF | 功能描述:達林頓晶體管 PNP Silicon Darl RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD122 | 功能描述:達林頓晶體管 8A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD122_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Darlington Power Transistor |
| MJD122_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:nullLow voltage power Darlington transistor |
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