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參數資料
| 型號： | MJD122T4 |
| 廠商： | 意法半導體 |
| 英文描述： | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
| 中文描述： | 互補功率達林頓晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 284K |
| 代理商： | MJD122T4 |
1
Motorola Bipolar Power Transistor Device Data
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)
Surface Mount Replacements for 2N6040–2N6045 Series, TIP120–TIP122
Series, and TIP125–TIP127 Series
Monolithic Construction With Built–in Base–Emitter Shunt Resistors
High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc
Rating
Collector–Emitter Voltage
Symbol
VCEO
VCB
VEB
IC
MJD127
100
Unit
Vdc
Collector–Base Voltage
100
Vdc
Emitter–Base Voltage
5
Vdc
Collector Current — Continuous
8
Adc
Derate above 25 C
0.014
W/ C
Operating and Storage Junction
TJ, Tstg
–65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
R
θ
JA
Max
6.25
Unit
C/W
Thermal Resistance, Junction to Ambient*
71.4
C/W
ELECTRICAL CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0)
Collector Cutoff Current
ICEO
100
—
—
10
Vdc
μ
Adc
(continued)
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD122/D
CASE 369A–13
SILICON
POWER TRANSISTORS
8 AMPERES
100 VOLTS
20 WATTS
*Motorola Preferred Device
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
REV 1
相關PDF資料 |
PDF描述 |
|---|---|
| MJD122 | Complementary Darlington Power Transistors |
| MJD122-1 | SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT |
| MJD122T4 | SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT |
| MJD122 | Complementary Darlington Power Transistors |
| MJD243 | NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD122T4G | 功能描述:達林頓晶體管 8A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD122T4G | 制造商:ON Semiconductor 功能描述:DARLINGTON TRANSISTOR NPN 100V D-PAK |
| MJD122T4G-CUT TAPE | 制造商:ON 功能描述:MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252 |
| MJD122TF | 功能描述:達林頓晶體管 NPN Sil Darl Trans RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD122-TP | 功能描述:TRANS NPN 100V 8A DPAK RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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