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參數資料
| 型號： | MJD210 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Plastic Power Transistors(互補型功率晶體管) |
| 中文描述： | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369A, DPAK-3 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 87K |
| 代理商： | MJD210 |
Semiconductor Components Industries, LLC, 2005
December, 2005 Rev. 7
1
Publication Order Number:
MJD200/D
MJD200 (NPN)
MJD210 (PNP)
Complementary Plastic
Power Transistors
NPN/PNP Silicon DPAK For Surface
Mount Applications
Designed for low voltage, lowpower, highgain audio
amplifier applications.
Features
CollectorEmitter Sustaining Voltage
V
CEO(sus)
= 25 Vdc (Min) @ I
C
= 10 mAdc
High DC Current Gain h
FE
= 70 (Min) @ I
C
= 500 mAdc
= 45 (Min) @ I
C
= 2 Adc
= 10 (Min) @ I
C
= 5 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 0.3 Vdc (Max) @ I
C
= 500 mAdc
= 0.75 Vdc (Max) @ I
C
= 2.0 Adc
High CurrentGain Bandwidth Product
f
T
= 65 MHz (Min) @ I
C
= 100 mAdc
Annular Construction for Low Leakage
I
CBO
= 100 nAdc @ Rated V
CB
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
Machine Model, C
PbFree Packages are Available
8000 V
400 V
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
CollectorBase Voltage
V
CB
V
CEO
V
EB
I
C
40
Vdc
CollectorEmitter Voltage
25
Vdc
EmitterBase Voltage
8
Vdc
Collector Current
Continuous
Peak
5
10
Adc
Base Current
I
B
P
D
1
mAdc
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
12.5
0.1
W
W/
°
C
Total Power Dissipation (Note 1)
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
1.4
0.011
W
W/
°
C
Operating and Storage Junction
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
T
J
, T
stg
65 to +150
°
C
SILICON
POWER TRANSISTORS
5 AMPERES
25 VOLTS, 12.5 WATTS
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
Y
WW
= Year
= Work Week
x = 1 or 0
= PbFree Package
G
1 2
3
4
YWW
J2x0G
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
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| MJD31 | Complementary Power Transistors(補償型功率晶體管) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD210_10 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS |
| MJD210G | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD210G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD210G-TM3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
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