- 您現在的位置：買賣IC網 > PDF目錄385578 > MJD253T4 (ON SEMICONDUCTOR) Complementary Silicon Plastic Power Transistor PDF資料下載
參數資料
| 型號： | MJD253T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon Plastic Power Transistor |
| 中文描述： | 4 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 124K |
| 代理商： | MJD253T4 |
Semiconductor Components Industries, LLC, 2004
March, 2004 Rev. 8
1
Publication Order Number:
MJD243/D
MJD243 (NPN),
MJD253 (PNP)
Preferred Device
Complementary Silicon
Plastic Power Transistor
DPAK3 for Surface Mount Applications
Designed for low voltage, lowpower, highgain audio amplifier
applications.
Features
CollectorEmitter Sustaining Voltage
V
CEO(sus)
= 100 Vdc (Min) @ I
C
= 10 mAdc
High DC Current Gain
h
FE
= 40 (Min) @ I
C
= 200 mAdc
= 15 (Min) @ I
C
= 1.0 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 0.3 Vdc (Max) @ I
C
= 500 mAdc
= 0.6 Vdc (Max) @ I
C
= 1.0 Adc
High CurrentGain Bandwidth Product
f
T
= 40 MHz (Min) @ I
C
= 100 mAdc
Annular Construction for Low Leakage
I
CBO
= 100 nAdc @ Rated V
CB
Epoxy Meets UL 94, V0 @ 0.125 in.
ESD Ratings: Human Body Model, 3B
Machine Model, C
PbFree Package is Available
8000 V
400 V
DPAK3
CASE 369D
STYLE 1
4.0 A, 100 V, 12.5 W
POWER TRANSISTOR
MARKING DIAGRAMS
Y
WW
J2x3 = Device Code
x
= 4 or 5
= Year
= Work Week
Device
Package
Shipping
ORDERING INFORMATION
DPAK3
DPAK3
CASE 369C
STYLE 1
YWW
J2x3
Preferred
devices are recommended choices for future use
and best overall value.
MJD243
75 Units/Rail
MJD243T4
DPAK3
2500/Tape & Reel
MJD2531
DPAK3
75 Units/Rail
http://onsemi.com
YWW
J2x3
MJD253T4
DPAK3
2500/Tape & Reel
12
3
4
12
3
Base
Collector
Emitter
4
MJD243T4G
DPAK3
(PbFree)
2500/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
相關PDF資料 |
PDF描述 |
|---|---|
| MJD31 | Complementary Power Transistors(補償型功率晶體管) |
| MJD31C | Complementary Power Transistors(補償型功率晶體管) |
| MJD32 | Complementary Power Transistors(互補型功率晶體管) |
| MJD340 | High Voltage Power Transistors(高電壓功率晶體管) |
| MJD44E3 | Darlington Power Transistor(達林頓功率晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD253T4G | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD29 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications |
| MJD2955 | 功能描述:兩極晶體管 - BJT 10A 60V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD2955_02 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY POWER TRANSISTORS |
| MJD2955_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors DPAK For Surface Mount Applications |
發布緊急采購，3分鐘左右您將得到回復。