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參數資料
| 型號： | MJD340 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage Power Transistors(高電壓功率晶體管) |
| 中文描述： | 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C, DPAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 98K |
| 代理商： | MJD340 |
High Voltage Power Transistors
DPAK For Surface Mount Applications
Designed for line operated audio output amplifier, switchmode
power supply drivers and other switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No
Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular MJE340 and MJE350
300 V (Min) — V
CEO(sus)
0.5 A Rated Collector Current
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
CEO
CB
EB
— Peak
P
D
0.12
1.56
C
0.75
W/ C
Watts
Derate above 25 C
Total Power Dissipation* @ T
= 25 C
P
15
Watts
Temperature Range
Operating and Storage Junction
T
J
, T
stg
–65 to +150
C
θ
JC
θ
JA
L
ELECTRICAL CHARACTERISTICS
(T
C
= 25 C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
V
300
—
0)
CB
E
CBO
0.1
mAdc
2%.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 3
1
Publication Order Number:
MJD340/D
SILICON
POWER TRANSISTORS
0.5 AMPERE
300 VOLTS
15 WATTS
*ON Semiconductor Preferred Device
MJD340
PNP
MJD350
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
*
NPN
*
CASE 369A–13
CASE 369–07
0
6
0
1
0
3
0
2
0
4
0
4
inches
mm
相關PDF資料 |
PDF描述 |
|---|---|
| MJD44E3 | Darlington Power Transistor(達林頓功率晶體管) |
| MJD44H11 | Complementary Power Transistors(互補型功率晶體管) |
| MJD45H11 | Complementary Power Transistors(互補功率晶體管) |
| MJD50 | High Voltage Power Transistors(高電壓功率晶體管) |
| MJE170 | Complementary Plastic Silicon Power Transistors(互補型硅功率晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD340_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJD340_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Voltage Power Transistors |
| MJD340-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS |
| MJD340-13 | 功能描述:兩極晶體管 - BJT HIGH VOLTAGE NPN SMT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD340G | 功能描述:兩極晶體管 - BJT 0.5A 300V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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