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參數資料
| 型號： | MJD44E3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Darlington Power Transistor(達林頓功率晶體管) |
| 中文描述： | 10 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | DPAK-3 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 50K |
| 代理商： | MJD44E3 |
Semiconductor Components Industries, LLC, 2005
December, 2005 Rev. 4
1
Publication Order Number:
MJD44E3/D
MJD44E3
Preferred Device
Darlington Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose power and switching output or driver
stages in applications such as switching regulators, converters, and
power amplifiers.
Features
Electrically Similar to Popular D44E3 Device
High DC Gain 1000 Min @ 5.0 Adc
Low Sat. Voltage 1.5 V @ 5.0 Adc
Compatible With Existing Automatic Pick and Place Equipment
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
Machine Model, C
PbFree Package is Available
8000 V
400 V
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
CollectorEmitter Voltage
V
CEO
80
Vdc
EmitterBase Voltage
V
EB
7
Vdc
Collector Current Continuous
I
C
10
Adc
Total Power Dissipation
@ T
C
= 25
°
C
Derate above 25
°
C
P
D
20
0.16
W
W/
°
C
Total Power Dissipation (Note 1)
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
1.75
0.014
W
W/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
JunctiontoCase
R
JC
6.25
°
C/W
Thermal Resistance,
JunctiontoAmbient (Note 1)
R
JA
71.4
°
C/W
Lead Temperature for Soldering
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
NPN DARLINGTON SILICON
POWER TRANSISTORS
10 AMPERES
80 VOLTS, 20 WATTS
MARKING DIAGRAM
Preferred
devices are recommended choices for future use
and best overall value.
Y
WW
J44E3 = Device Code
G
= PbFree Package
= Year
= Work Week
Device
Package
Shipping
ORDERING INFORMATION
MJD44E3T4
DPAK
2500/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
DPAK
CASE 369C
STYLE 1
YWW
J
44E3G
1 2
3
4
MJD44E3T4G
DPAK
(PbFree)
2500/Tape & Reel
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD44E3-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS |
| MJD44E3T4 | 功能描述:達林頓晶體管 10A 80V 20W NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD44E3T4G | 功能描述:達林頓晶體管 10A 80V 20W NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD44H11 | 功能描述:兩極晶體管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD44H11_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON PNP TRANSISTORS |
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