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參數資料
| 型號： | MJE170 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Plastic Silicon Power Transistors(互補型硅功率晶體管) |
| 中文描述： | 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 封裝： | PLASTIC, CASE 77-09, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 82K |
| 代理商： | MJE170 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 9
1
Publication Order Number:
MJE171/D
MJE170, MJE171, MJE172
(PNP), MJE180, MJE181,
MJE182 (NPN)
Preferred Device
Complementary Plastic
Silicon Power Transistors
The MJE170/180 series is designed for low power audio amplifier
and low current, high speed switching applications.
Features
CollectorEmitter Sustaining Voltage
V
CEO(sus)
= 40 Vdc MJE170, MJE180
= 60 Vdc MJE171, MJE181
= 80 Vdc MJE172, MJE182
DC Current Gain
h
FE
= 30 (Min) @ I
C
= 0.5 Adc
= 12 (Min) @ I
C
= 1.5 Adc
CurrentGain Bandwidth Product
f
T
= 50 MHz (Min) @ I
C
= 100 mAdc
Annular Construction for Low Leakages
I
CBO
= 100 nA (Max) @ Rated V
CB
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Machine Model, C
Human Body Model, 3B
PbFree Packages are Available*
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be
affected.
CollectorBase Voltage
V
CB
Vdc
MJE171, MJE181
MJE171, MJE181
CEO
60
Collector Current
Continuous
Derate above 25 C
B
0.012
W/ C
Temperature Range
Total Power Dissipation @ T
A
= 25 C
P
D
12.5
W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO225AA
CASE 7709
STYLE 1
3 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
40 60 80 VOLTS
12.5 WATTS
321
Preferred
devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
MARKING DIAGRAM
YWW
JE1xxG
Y
WW
JE1xx
= Year
= Work Week
= Specific Device Code
x = 70, 71, 72, 80, 81, or 82
= PbFree Package
G
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|---|---|
| MJE180 | Complementary Plastic Silicon Power Transistors(互補型硅功率晶體管) |
| MJE253 | Complementary Silicon Power Plastic Transistors(互補型硅功率晶體管) |
| MJE350 | Plastic Medium Power PNP Silicon Transistor(0.5A,300V,20W,塑料中等功率硅PNP晶體管) |
| MJE4353 | High-Voltage High Power Transistor(16A,160V,高壓大功率硅PNP晶體管) |
| MJE800 | Plastic Darlington Complementary Silicon Power Transistors(互補型達林頓硅功率晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJE170G | 功能描述:兩極晶體管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE170STU | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE171 | 功能描述:兩極晶體管 - BJT 3A 60V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE171_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS |
| MJE171G | 功能描述:兩極晶體管 - BJT 3A 60V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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