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參數資料
| 型號： | MJE4353 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High-Voltage High Power Transistor(16A,160V,高壓大功率硅PNP晶體管) |
| 中文描述： | 16 A, 160 V, PNP, Si, POWER TRANSISTOR, TO-218 |
| 封裝： | CASE 340D-02, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 91K |
| 代理商： | MJE4353 |
High-Voltage High Power
Transistors
. . . designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
High Collector–Emitter Sustaining Voltage —
NPN
PNP
V
CEO(sus)
= 160 Vdc — MJE4343 MJE4353
High DC Current Gain — @ I
C
= 8.0 Adc
h
FE
= 35 (Typ)
Low Collector–Emitter Saturation Voltage —
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 8.0 Adc
Rating
Symbol
Max
Unit
Collector–Emitter Voltage
V
CEO
160
Vdc
Collector–Base Voltage
V
CB
160
Vdc
Emitter–Base Voltage
V
EB
7.0
Vdc
Collector Current — Continuous
I
C
16
Adc
Temperature Range
Characteristic
Symbol
Max
Unit
3.5
0
Figure 1. Power Derating
Reference: Ambient Temperature
T
A
, AMBIENT TEMPERATURE (
°
C)
25
50
100
125
3.0
2.5
0.5
75
150
1.0
1.5
2.0
P
ON Semiconductor
Semiconductor Components Industries, LLC, 2002
January, 2002 – Rev. 3
1
Publication Order Number:
MJE4343/D
MJE4343
PNP
MJE4353
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
160 VOLTS
NPN
CASE 340D–02
TO–218 TYPE
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJE4353G | 功能描述:兩極晶體管 - BJT 16A 160V 125W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE5030 | 制造商:ON Semiconductor 功能描述: |
| MJE5170 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistors |
| MJE5171 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistors |
| MJE5172 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistors |
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