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參數資料
| 型號： | MJE800 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Darlington Complementary Silicon Power Transistors(互補型達林頓硅功率晶體管) |
| 中文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-225 |
| 封裝： | PLASTIC, CASE 77-09, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 84K |
| 代理商： | MJE800 |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 8
1
Publication Order Number:
MJE700/D
MJE700, MJE702, MJE703
(PNP) MJE800, MJE802,
MJE803 (NPN)
Plastic Darlington
Complementary Silicon
Power Transistors
These devices are designed for generalpurpose amplifier and
lowspeed switching applications.
Features
High DC Current Gain h
FE
= 2000 (Typ) @ I
C
= 2.0 Adc
Monolithic Construction with Builtin BaseEmitter Resistors to
Limit Leakage Multiplication
Choice of Packages MJE700 and MJE800 Series
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
MJE702, MJE703, MJE802, MJE803
CEO
80
CollectorBase Voltage
MJE702, MJE703, MJE802, MJE803
V
CB
80
Vdc
EmitterBase Voltage
Collector Current
Base Current
Total Power Dissipation @ T
C
= 25 C
V
EB
I
C
I
B
P
D
J
stg
5.0
4.0
0.1
40
0.32
Vdc
Adc
Adc
mW/ C
Characteristic
Symbol
Max
Unit
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
4.0 AMPERE
DARLINGTON POWER
TRANSISTORS
COMPLEMENTARY SILICON
40 WATT
50 WATT
http://onsemi.com
TO225
CASE 77
STYLE 1
21
3
MARKING DIAGRAM
YWW
JEx0yG
Y
WW
JEx0y = Device Code
x = 7 or 8
y = 0, 2, or 3
G
= PbFree Package
= Year
= Work Week
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
相關PDF資料 |
PDF描述 |
|---|---|
| MJF4343 | POWER TRANSISTORS COMPLEMENTARY SILICON |
| MJF6388 | Complementary Power Darlingtons(互補型功率晶體管) |
| MJL0281A | Complementary NPN(互補型NPN) |
| MJL0302A | Complementary NPN(互補型NPN) |
| MJW21196 | Silicon Power Transistors(硅功率晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJE800G | 功能描述:達林頓晶體管 4A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE800STU | 功能描述:達林頓晶體管 NPN Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE800T | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(4.0A,60-80V,40W) |
| MJE801 | 功能描述:達林頓晶體管 RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE801STU | 功能描述:達林頓晶體管 NPN Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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