- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371114 > MJD243-1 (MOTOROLA INC) NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS PDF資料下載
參數(shù)資料
| 型號(hào)： | MJD243-1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS |
| 中文描述： | 4 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 209K |
| 代理商： | MJD243-1 |
1
Motorola Bipolar Power Transistor Device Data
DPAK For Surface Mount Applications
. . . designed for low voltage, low–power, high–gain audio amplifier applications.
Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain — hFE= 40 (Min) @ IC = 200 mAdc
= 15 (Min) @ IC = 1.0 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Low Collector–Emitter Saturation Voltage —
VCE(sat)= 0.3 Vdc (Max) @ IC = 500 mAdc
= 0.6 Vdc (Max) @ IC = 1.0 Adc
Collector Current — Continuous
4
8
Adc
Peak
0.1
PD
1.4
Watts
Characteristic
Thermal Resistance, Junction to Case
R
θ
JA
Symbol
Max
10
Unit
C/W
25
25
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
0
50
75
100
125
150
15
10
TC
5
20
P
2.5
0
1.5
1
TA
0.5
2
TC
TA (SURFACE MOUNT)
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD243/D
NPN SILICON
POWER TRANSISTOR
4 AMPERES
100 VOLTS
12.5 WATTS
*Motorola Preferred Device
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
CASE 369A–13
CASE 369–07
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD243T4 | NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS |
| MJD2955 | SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS |
| MJD3055 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJD2955 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJD3055 | Complementary Power Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD243G | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD243G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD243T4 | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD243T4G | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD253 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Plastic Power Transistor |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。