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參數(shù)資料
| 型號(hào)： | MJD3055 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 互補(bǔ)性的芯片功率晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 202K |
| 代理商： | MJD3055 |
1
Motorola Bipolar Power Transistor Device Data
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to MJE2955 and MJE3055
DC Current Gain Specified to 10 Amperes
Derate above 25 C
0.014
W/ C
Operating and Storage Junction
TJ, Tstg
–55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
R
θ
JA
Max
6.25
Unit
C/W
Thermal Resistance, Junction to Ambient (1)
71.4
C/W
(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD2955/D
CASE 369A–13
SILICON
POWER TRANSISTORS
10 AMPERES
60 VOLTS
20 WATTS
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
REV 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD2955 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJD3055 | Complementary Power Transistors |
| MJD2955 | Complementary Power Transistors |
| MJD2955-1 | SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS |
| MJD3055 | SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD3055-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS |
| MJD3055G | 功能描述:兩極晶體管 - BJT 10A 60V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD3055T4 | 功能描述:兩極晶體管 - BJT NPN Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD3055T4G | 功能描述:兩極晶體管 - BJT 10A 60V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD3055TF | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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