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參數資料
| 型號： | MJD50-1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS |
| 中文描述： | 1 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數： | 1/6頁 |
| 文件大小： | 184K |
| 代理商： | MJD50-1 |
1
Motorola Bipolar Power Transistor Device Data
DPAK For Surface Mount Applications
Designed for line operated audio output amplifier, switchmode power supply drivers
and other switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP47, and TIP50
250 and 400 V (Min) — VCEO(sus)
2
Base Current
Total Power Dissipation @ TC = 25 C
Peak
IB
PD
0.6
15
Adc
Watts
Temperature Range
(VCE = 150 Vdc, IB = 0)
MJD47
(1) Pulse Test: Pulse Width
—
—
0.2
0.2
300
μ
s, Duty Cycle
2%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD47/D
NPN SILICON
POWER TRANSISTORS
1 AMPERE
250, 400 VOLTS
15 WATTS
*Motorola Preferred Device
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
CASE 369A–13
CASE 369–07
REV 1
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| MJD50 | High Voltage and High Reliability D-PAK for Surface Mount Applications |
| MJD6036 | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6036-1 | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6036T4 | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6039 | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD50G | 功能描述:兩極晶體管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD50T4 | 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD50T4G | 功能描述:兩極晶體管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD50T4G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 400V D-PAK 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, NPN, 400V D-PAK |
| MJD50T4G-CUT TAPE | 制造商:ON 功能描述:MJD Series 400 V 1 A NPN Surface Mount Power Transistor - TO-252 |
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