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參數資料
| 型號： | MJE13001 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 中文描述： | npn型外延硅晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 98K |
| 代理商： | MJE13001 |
UTC MJE13001
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-055,A
FEATURES
* Collector-Base Voltage: V(BR)
CBO
=600V
* Collector Current: I
C
=0.2A
TO-92
1
1: BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(Tc=25
°
C)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC current gain
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
Pc
T
j
T
STG
RATING
600
400
7
200
750
150
-55 ~ +150
UNIT
V
V
V
mA
mW
°
C
°
C
SYMBOL
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE
(sat)
V
BE
(sat)
V
BE
f
T
t
F
t
S
TEST CONDITIONS
I
C
=100
μ
A, I
E
=0
Ic=1mA, I
B
=0
I
E
=100
μ
A, I
C
=0
V
CB
=600V, I
E
=0
V
CE
=400V, I
B
=0
V
EB
=7V, I
C
=0
V
CE
=20V, Ic=20mA
V
CE
=10V, Ic=0.25mA
Ic=50mA, I
B
=10mA
Ic=50mA, I
B
=10mA
I
E
=100mA
V
CE
=20V, Ic=20mA, f=1MHz
Ic=50mA, I
B1
=-I
B2
=5mA,
Vcc=45V
MIN
600
400
7
10
5
8
TYP
MAX
100
200
100
70
0.5
1.2
1.1
0.3
1.5
UNIT
V
V
V
μ
A
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
Collector-emitter saturation voltage
Base-emitter Saturation Voltage
Base-emitter Voltage
Transition Frequency
Fall Time
Storage Time
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