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參數(shù)資料
型號(hào)： MJE1320BD
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 2 A, 900 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 1/63頁(yè)
文件大小： 434K
代理商： MJE1320BD
3–620
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
NPN Silicon Power Transistor
Switchmode Series
This transistor is designed for high–voltage, power switching in inductive circuits
where RBSOA and breakdown voltage are critical. They are particularly suited for
line–operated switchmode applications.
Typical Applications:
Fluorescent Lamp Ballasts
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Features:
High VCEV Capability (1800 Volts)
Low Saturation Voltage
100_C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO(sus)
900
Vdc
Collector–Emitter Voltage
VCEV
1800
Vdc
Emitter Base Voltage
VEB
9
Vdc
Collector Current — Continuous
Peak(1)
IC
ICM
2
5
Adc
Base Current — Continuous
Peak(1)
IB
IBM
1.5
2.5
Adc
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above 25
_C
PD
80
32
0.64
Watts
W/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.56
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE1320
POWER TRANSISTOR
2 AMPERES
900 VOLTS
80 WATTS
CASE 221A–06
TO–220AB
相關(guān)PDF資料
PDF描述
MJE1320BG 2 A, 900 V, NPN, Si, POWER TRANSISTOR
MJE1320AU 2 A, 900 V, NPN, Si, POWER TRANSISTOR
MJE15031DW 8 A, 150 V, PNP, Si, POWER TRANSISTOR
MJE15031BU 8 A, 150 V, PNP, Si, POWER TRANSISTOR
MJE15031BA 8 A, 150 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE15028 功能描述:兩極晶體管 - BJT 8A 120V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE15028_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS
MJE15028G 功能描述:兩極晶體管 - BJT 8A 120V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE15029 功能描述:兩極晶體管 - BJT 8A 120V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE15029 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR PNP -120V TO-220 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -120V, TO-220
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