- 您現在的位置：買賣IC網 > PDF目錄98018 > MJE18004DW (ON SEMICONDUCTOR) 5 A, 450 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數資料
| 型號： | MJE18004DW |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數： | 1/66頁 |
| 文件大小： | 504K |
| 代理商： | MJE18004DW |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁
3–715
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF18004 have an applications specific state–of–the–art die designed
for use in 220 V line operated Switchmode Power supplies and electronic light
ballasts. This high voltage/high speed transistors offer the following:
Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Full Characterization at 125_C
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
Two Package Choices: Standard TO–220 or Isolated TO–220
MJF18004, Case 221D, is UL Recognized at 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating
Symbol
MJE18004
MJF18004
Unit
Collector–Emitter Sustaining Voltage
VCEO
450
Vdc
Collector–Emitter Breakdown Voltage
VCES
1000
Vdc
Emitter–Base Voltage
VEBO
9.0
Vdc
Collector Current — Continuous
— Peak(1)
IC
ICM
5.0
10
Adc
Base Current — Continuous
— Peak(1)
IB
IBM
2.0
4.0
Adc
RMS Isolation Voltage(2) Test No. 1 Per Fig. 22a
(for 1 sec, R.H.
Test No. 2 Per Fig. 22b
< 30%, TA = 25_C)
Test No. 3 Per Fig. 22c
VISOL
—
4500
3500
1500
Volts
Total Device Dissipation
(TC = 25_C)
Derate above 25
_C
PD
75
0.6
35
0.28
Watts
W/
_C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
_C
THERMAL CHARACTERISTICS
Rating
Symbol
MJE18004
MJF18004
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
1.65
62.5
3.55
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
260
_C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
450
—
—
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
—
—
100
Adc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 25_C)
(TC = 125_C)
Collector Cutoff Current (VCE = 800 V, VEB = 0)
(TC = 125_C)
ICES
—
—
100
500
100
Adc
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
IEBO
—
—
100
Adc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
v 10%.
(continued)
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE18004
MJF18004
POWER TRANSISTOR
5.0 AMPERES
1000 VOLTS
35 and 75 WATTS
*Motorola Preferred Device
*
CASE 221A–06
TO–220AB
MJE18004
CASE 221D–02
ISOLATED TO–220 TYPE
MJF18004
REV 3
相關PDF資料 |
PDF描述 |
|---|---|
| MJE18004BG | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18004AJ | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18004BS | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18004BC | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18004AF | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJE18004G | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18006 | 功能描述:兩極晶體管 - BJT 6A 450V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18006G | 功能描述:兩極晶體管 - BJT BIP NPN 8A 450V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18008 | 功能描述:兩極晶體管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18008G | 功能描述:兩極晶體管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。