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參數(shù)資料
型號: MJE243
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS
中文描述: 4 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-225AA
文件頁數(shù): 1/6頁
文件大小: 235K
代理商: MJE243
1
Motorola Bipolar Power Transistor Device Data
. . . designed for low power audio amplifier and low–current, high–speed switching
applications.
High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253
High DC Current Gain @ IC = 200 mAdc
hFE = 40–200
hFE
= 40–120 — MJE243, MJE253
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
High Current Gain Bandwidth Product —
fT = 40 MHz (Min) @ IC = 100 mAdc
ICBO = 100 nAdc (Max) @ Rated VCB
Collector Current — Continuous
Peak
4.0
8.0
Adc
Derate @ 25 C
1.5
0.012
Watts
W/ C
Operating and Storage Junction
TJ, Tstg
–65 to +150
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
θ
θ
JA
8.34
83.4
C/W
C/W
16
20
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
0
40
60
100
120
160
12
P
1.6
0
1.2
8.0
0.8
4.0
0.4
80
140
T
P
T
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE243/D
4 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
100 VOLTS
15 WATTS
*Motorola Preferred Device
CASE 77–08
TO–225AA
REV 7
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相關(guān)代理商/技術(shù)參數(shù)
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