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參數資料
| 型號： | MJE2955T |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Mini size of Discrete semiconductor elements |
| 中文描述： | 迷你型離散半導體元件 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 129K |
| 代理商： | MJE2955T |
1
Motorola Bipolar Power Transistor Device Data
!
. . . designed for use in general–purpose amplifier and switching applications.
DC Current Gain Specified to 10 Amperes
fT = 2.0 MHz (Min) @ IC = 500 mAdc
Derate above 25 C
Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
10
7.0
5.0
Figure 1. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.7
0.2
0.1
20
30
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 25
°
C (D = 0.1)
I
dc
7.0
10
5.0 ms
1.0 ms
50
60
0.5
3.0
0.3
TJ = 150
°
C
100
μ
s
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150 C. TC is vari-
able depending on conditions. Second breakdown pulse lim-
its are valid for duty cycles to 10% provided TJ(pk)
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown. (See AN415A)
150 C.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE2955T/D
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 VOLTS
75 WATTS
*Motorola Preferred Device
CASE 221A–06
TO–220AB
REV 1
相關PDF資料 |
PDF描述 |
|---|---|
| MJE2955T | COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJE350 | 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS |
| MJE350 | High Voltage General Purpose Applications |
| MJE371 | 4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS |
| MJE371 | POWER TRANSISTOR PNP SILICON |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJE2955T | 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP TO-220 |
| MJE2955T_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJE2955TD127 | 制造商:Motorola Inc 功能描述: |
| MJE2955TG | 功能描述:兩極晶體管 - BJT 10A 60V 125W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE2955TG-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
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